N-channel 0.037 TO-247 gate charge STripFETPower MOSFET Type STW7

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N-channel 0.037 TO-247 gate charge STripFETPower MOSFET Type STW7

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STW75NF30
N-channel 0.037 TO-247 gate charge STripFETPower MOSFET
Type STW75NF30
VDSS
RDS(on) 0.045
Exceptional dv/dt capability gate charge 100% Avalanche tested
TO-247
Application
Switching applications
Description
This Power MOSFET series realized with STMicroelectronics unique STripFETprocess specifically been designed minimize input capacitance gate charge. therefore suitable primary switch advanced highefficiency isolated DC-DC converters Figure Internal schematic diagram
Table
Device summary
Order code STW75NF30 Marking 75NF30 Package TO-247 Packaging Tube
July 2008
1/12
www.st.com
Contents
STW75NF30
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuits
Package mechanical data Revision history
2/12
STW75NF30
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS Gate-source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Derating factor Value 37.8 2.56 Unit W/°C V/ns
dv/dt(2) PTOT Tstg
Peak diode recovery voltage slope Total dissipation Operating junction temperature Storage temperature
Pulse width limited safe operating area 60A, di/dt 200A/µs, V(BR)DSS
Table
Symbol Rthj-case Rthj-amb
Thermal resistance
Parameter Thermal resistance junction-case Thermal resistance junction-ambient Maximum lead temperature soldering purpose Value 0.39 Unit °C/W °C/W
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited max) Single pulse avalanche energy (starting IAR, Max. value Unit
3/12
Electrical characteristics
STW75NF30
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Gate body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions rating, rating @125 VGS, VGS= 0.037 Min. ±100 0.045 Typ. Max. Unit
Table
Symbol gfs(1) Ciss Coss Crss Coss eq.(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse Transfer Capacitance Equivalent output capacitance Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge Test conditions MHz, Min. Typ. 5930 1.55 Max. Unit
open drain (see Figure
Pulsed: pulse duration 300µs, duty cycle 1.5% Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
4/12
STW75NF30 Table
Symbol td(on) td(off)
Electrical characteristics Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions (see Figure Min. Typ. Max. Unit
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current A,VDD di/dt A/µs (see Figure di/dt A/µs 150°C (see Figure 23.2 Test conditions Min. Typ. Max. Unit
VSD(2) IRRM IRRM
Pulse with limited maximum temperature Pulsed: pulse duration 300µs, duty cycle 1.5%
5/12
Electrical characteristics
STW75NF30
Figure
Electrical characteristics (curves)
Safe operating area
AM00116v1
Figure
Thermal impedance
10µs
mite
100µs
10ms
10-1 10-1
VDS(V)
Figure
Output characteristics
AM00117v1
Figure
Transfer characteristics
AM00118v1
ID(A)
ID(A)
VGS=10V
VGS(V)
VDS(V)
Figure
BVDSS (norm) 1.15 1.05
Normalized BVDSS temperature
AM00124v1
Figure
Static drain-source resistance
AM00122v1
RDS(on) 0.035
0.0345
0.95 0.85
0.0335 0.034
TJ(°C)
ID(A)
6/12
STW75NF30 Figure
10-1
Electrical characteristics Gate charge gate-source voltage Figure
AM00119v1
Capacitance variations
AM00120v1
VGS=10V ID=60A VDD=240V
(pF)
Ciss
Coss Crss
Qg(nC)
VDS(V)
Figure Normalized gate threshold volatge temperature
VGS(th) (norm)
AM00125v1
Figure Normalized resistancevs temperature
RDS(on)
AM00126v1
TJ(°C)
TJ(°C)
Figure Source-drain diode forward characteristics
150°C
AM00123v1
Figure Maximum avalanche energy temperature
AM00121v1
TJ=-50°C 25°C
(mJ)
ISD(A)
TJ(°C)
7/12
Test circuits
STW75NF30
Test circuits
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
8/12
STW75NF30
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
9/12
Package mechanical data
STW75NF30
TO-247 Mechanical data
Min. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim.
10/12
STW75NF30
Revision history
Revision history
Table
Date 23-Oct-2007 27-May-2008 15-Jul-2008
Document revision history
Revision First release value inserted Table Dynamic Document status promoted from preliminary data datasheet Changes
11/12
STW75NF30
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N-channel 0.037 TO-247 gate charge STripFETPower MOSFET Type STW7

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