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High-voltage high side driver High voltage rail dV/dt immunity V/


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L6387E
High-voltage high side driver
High voltage rail dV/dt immunity V/nsec full temperature range Driver current capability: source, sink Switching times 50/30 nsec rise/fall with load CMOS/TTL Schmitt trigger inputs with hysteresis pull down Internal bootstrap diode Outputs phase with inputs Interlocking function
DIP-8 SO-8
Description
L6387E high-voltage device, manufactured with BCD"OFF-LINE" technology. Driver structure that enables drive independent referenced Channel Power IGBT. high side (Floating) Section enabled work with voltage Rail 600V. Logic Inputs CMOS/TTL compatible ease interfacing with controlling devices.
Figure
Block diagram
BOOTSTRAP DRIVER
Vboot H.V. Cboot
DETECTION
DRIVER
LOGIC
LEVEL SHIFTER
DRIVER LOAD
D00IN1135
September 2008
1/15
www.st.com
Contents
L6387E
Contents
Electrical data
Absolute maximum ratings Thermal data Recommended operating conditions
connection Electrical characteristics
operation operation
Input logic Bootstrap driver
CBOOT selection charging
Typical characteristic Package mechanical data Order codes Revision history
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L6387E
Electrical data
Electrical data
Absolute maximum ratings
Table
Symbol Vout Vboot Vhvg Vlvg dVout/dt Ptot Output voltage Supply voltage Floating supply voltage High side gate output voltage side gate output voltage Logic input voltage Allowed output slew rate Total power dissipation Junction temperature Storage temperature
Absolute maximum ratings
Parameter Value Vboot Vboot -0.3 +0.3 -0.3 +0.3 Unit V/ns
Note:
immunity pins guaranteed (Human Body Model)
Thermal data
Table
Symbol Rth(JA)
Thermal data
Parameter Thermal Resistance Junction ambient SO-8 DIP-8 Unit °C/W
Recommended operating conditions
Table
Symbol Vout
Recommended operating conditions
Parameter Output voltage Floating supply voltage Switching frequency Supply voltage Junction temperature HVG,LVG load Test condition
Unit
condition Vboot Vout guaranteed, Vout range from 580V Vboot Vout
3/15
connection
L6387E
connection
Figure connection (Top view)
D97IN517A
Vboot
Table
description
VOUT Vboot Type side driver logic input High side driver logic input voltage power supply Ground side driver output High side driver floating reference High side driver output Bootstrap supply voltage Function
circuit guarantees 0.3V maximum Isink 10mA). This allows omit "bleeder" resistor connected between gate source external MOSFET normally used hold low.
4/15
L6387E
Electrical characteristics
Electrical characteristics
operation
Table
Symbol toff
operation electrical characteristcs (VCC 15V; 25°C)
Parameter Test condition Vout Vout 1000pF 1000pF Unit
High/low side driver turn-on propagation delay High/low side driver turn-off propagation delay Rise time Fall time
operation
Table
Symbol
operation electrical characteristcs (VCC 15V; 25°C)
Parameter Test condition Unit
supply voltage section Vccth1 Vccth2 Vcchys Iqccu Iqcc Rdson Supply voltage turn threshold turn threshold hysteresis Undervoltage quiescent supply current Quiescent current Bootstrap driver resistance(1) 12.5V
Bootstrapped supply voltage section IQBS Bootstrap supply voltage quiescent current High voltage leakage current Vhvg Vout Vboot 600V
High/low side driver Source short circuit current Sink short circuit current 10µs) 10µs)
5/15
Input logic Table
Symbol
L6387E operation electrical characteristcs (continued)(VCC 15V; 25°C)
Parameter Test condition Unit
Logic inputs level logic threshold voltage High level logic threshold voltage High level logic input current level logic input current
RDS(on) tested following way:
CBOOT1 CBOOT2 DSON CBOOT1 CBOOT2
where current when VCBOOT VCBOOT1, when VCBOOT VCBOOT2
Input logic
L6387E Input Logic (17V) compatible. interlocking features offered (see truth table below) avoid undesired simultaneous turn both Power Switches driven. Table
Input Output
Input logic
6/15
L6387E
Bootstrap driver
Bootstrap driver
bootstrap circuitry needed supply high voltage section. This function normally accomplished high voltage fast recovery diode (Figure L6387E patented integrated structure replaces external diode. realized high voltage DMOS, driven synchronously with side driver (LVG), with series diode, shown Figure internal charge pump (Figure provides DMOS driving voltage. diode connected series DMOS been added avoid undesirable turn
CBOOT selection charging
choose proper CBOOT value external seen equivalent capacitor. This capacitor CEXT related total gate charge:
gate gate
ratio between capacitors CEXT CBOOT proportional cyclical voltage loss.
CBOOT>>>CEXT
e.g.: Qgate 30nC Vgate 10V, CEXT 3nF. With CBOOT 100nF drop would 300mV. supplied long time, CBOOT selection take into account also leakage losses. e.g.: steady state consumption lower than 200µA, 5ms, CBOOT supply CEXT. This charge capacitor means voltage drop internal bootstrap driver gives great advantages: external fast recovery diode avoided usually great leakage current). This structure work only VOUT close lower) meanwhile charging time (Tcharge CBOOT time which both conditions fulfilled long enough charge capacitor. bootstrap driver introduces voltage drop DMOS RDSON (typical value: frequency this drop neglected. Anyway increasing frequency must taken account. following equation useful compute drop bootstrap DMOS:
gate drop dson drop dson
where Qgate gate charge external power MOS, Rdson resistance bootstrap DMOS, Tcharge charging time bootstrap capacitor.
7/15
Bootstrap driver
L6387E
example: using power with total gate charge 30nC drop bootstrap DMOS about Tcharge 5µs. fact:
30nC drop 0.8V
Vdrop taken into account when voltage drop CBOOT calculated: this drop high, circuit topology doesn't allow sufficient charging time, external diode used. Figure Bootstrap driver
DBOOT
VBOOT H.V.
CBOOT VOUT LOAD
VBOOT H.V.
CBOOT VOUT LOAD
D99IN1056
8/15
L6387E
Typical characteristic
Typical characteristic
Figure
time (nsec)
Typical rise fall times load capacitance
D99IN1054
Figure
(µA)
Quiescent current supply voltage
D99IN1055
(nF) both high side buffers @25°C Tamb
VS(V)
Figure
Turn time temperature
Figure
Turn time temperature
Toff (ns)
Typ.
(ns)
Typ.
(°C)
(°C)
Figure
Output source current temperature
Figure
1000
Output sink current temperature
1000
current (mA)
current (mA)
Typ.
Typ.
(°C)
(°C)
9/15
Package mechanical data
L6387E
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
10/15
L6387E
Package mechanical data Figure DIP-8 mechanical data package dimensions
DIM. MIN. 3.18 7.95 2.54 7.62 7.62 5.08 3.81 1.52 0.125 0.51 1.15 0.356 0.204 1.65 0.55 0.304 10.92 9.75 0.313 0.100 0.300 0.300 0.260 0.200 0.150 0.060 TYP. 3.32 0.020 0.045 0.014 0.008 0.065 0.022 0.012 0.430 0.384 MAX. MIN. TYP. 0.131 MAX. inch
OUTLINE MECHANICAL DATA
DIP-8
11/15
Package mechanical data Figure SO-8 mechanical data package dimensions
DIM. MIN.
L6387E
inch MAX. 1.750 MIN. TYP. MAX. 0.0689 0.0098
TYP.
OUTLINE MECHANICAL DATA
0.100 1.250 0.280 0.170 4.800 5.800 3.800 4.900 6.000 3.900 1.270 0.250 0.400 1.040
0.250 0.0039 0.0492 0.480 0.0110 0.230 0.0067
0.0189 0.0091
5.000 0.1890 0.1929 0.1969 6.200 0.2283 0.2362 0.2441 4.000 0.1496 0.1535 0.1575 0.0500 0.500 0.0098 1.270 0.0157 0.0409 0.100 0.0039 0.0197 0.0500
Notes: Dimensions does include mold flash, protrusions gate burrs. Mold flash, potrusions gate burrs shall exceed 0.15mm total (both side). Dimension "E1" does include interlead flash protrusions. Interlead flash protrusions shall exceed 0.25mm side.
SO-8
0016023
12/15
L6387E
Order codes
Order codes
Table Order codes
Part number L6387E L6387ED L6387ED013TR Package DIP-8 SO-8 SO-8 Packaging Tube Tube Tape reel
13/15
Revision history
L6387E
Revision history
Table
Date 11-Oct-2007 19-Sep-2008
Document revision history
Revision First release Minor text changes Table Changes
14/15
L6387E
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