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High-voltage high side driver High voltage rail dV/dt immunity V/
Top Searches for this datasheetL6387E High-voltage high side driver High voltage rail dV/dt immunity V/nsec full temperature range Driver current capability: source, sink Switching times 50/30 nsec rise/fall with load CMOS/TTL Schmitt trigger inputs with hysteresis pull down Internal bootstrap diode Outputs phase with inputs Interlocking function DIP-8 SO-8 Description L6387E high-voltage device, manufactured with BCD"OFF-LINE" technology. Driver structure that enables drive independent referenced Channel Power IGBT. high side (Floating) Section enabled work with voltage Rail 600V. Logic Inputs CMOS/TTL compatible ease interfacing with controlling devices. Figure Block diagram BOOTSTRAP DRIVER Vboot H.V. Cboot DETECTION DRIVER LOGIC LEVEL SHIFTER DRIVER LOAD D00IN1135 September 2008 1/15 www.st.com Contents L6387E Contents Electrical data Absolute maximum ratings Thermal data Recommended operating conditions connection Electrical characteristics operation operation Input logic Bootstrap driver CBOOT selection charging Typical characteristic Package mechanical data Order codes Revision history 2/15 L6387E Electrical data Electrical data Absolute maximum ratings Table Symbol Vout Vboot Vhvg Vlvg dVout/dt Ptot Output voltage Supply voltage Floating supply voltage High side gate output voltage side gate output voltage Logic input voltage Allowed output slew rate Total power dissipation Junction temperature Storage temperature Absolute maximum ratings Parameter Value Vboot Vboot -0.3 +0.3 -0.3 +0.3 Unit V/ns Note: immunity pins guaranteed (Human Body Model) Thermal data Table Symbol Rth(JA) Thermal data Parameter Thermal Resistance Junction ambient SO-8 DIP-8 Unit °C/W Recommended operating conditions Table Symbol Vout Recommended operating conditions Parameter Output voltage Floating supply voltage Switching frequency Supply voltage Junction temperature HVG,LVG load Test condition Unit condition Vboot Vout guaranteed, Vout range from 580V Vboot Vout 3/15 connection L6387E connection Figure connection (Top view) D97IN517A Vboot Table description VOUT Vboot Type side driver logic input High side driver logic input voltage power supply Ground side driver output High side driver floating reference High side driver output Bootstrap supply voltage Function circuit guarantees 0.3V maximum Isink 10mA). This allows omit "bleeder" resistor connected between gate source external MOSFET normally used hold low. 4/15 L6387E Electrical characteristics Electrical characteristics operation Table Symbol toff operation electrical characteristcs (VCC 15V; 25°C) Parameter Test condition Vout Vout 1000pF 1000pF Unit High/low side driver turn-on propagation delay High/low side driver turn-off propagation delay Rise time Fall time operation Table Symbol operation electrical characteristcs (VCC 15V; 25°C) Parameter Test condition Unit supply voltage section Vccth1 Vccth2 Vcchys Iqccu Iqcc Rdson Supply voltage turn threshold turn threshold hysteresis Undervoltage quiescent supply current Quiescent current Bootstrap driver resistance(1) 12.5V Bootstrapped supply voltage section IQBS Bootstrap supply voltage quiescent current High voltage leakage current Vhvg Vout Vboot 600V High/low side driver Source short circuit current Sink short circuit current 10µs) 10µs) 5/15 Input logic Table Symbol L6387E operation electrical characteristcs (continued)(VCC 15V; 25°C) Parameter Test condition Unit Logic inputs level logic threshold voltage High level logic threshold voltage High level logic input current level logic input current RDS(on) tested following way: CBOOT1 CBOOT2 DSON CBOOT1 CBOOT2 where current when VCBOOT VCBOOT1, when VCBOOT VCBOOT2 Input logic L6387E Input Logic (17V) compatible. interlocking features offered (see truth table below) avoid undesired simultaneous turn both Power Switches driven. Table Input Output Input logic 6/15 L6387E Bootstrap driver Bootstrap driver bootstrap circuitry needed supply high voltage section. This function normally accomplished high voltage fast recovery diode (Figure L6387E patented integrated structure replaces external diode. realized high voltage DMOS, driven synchronously with side driver (LVG), with series diode, shown Figure internal charge pump (Figure provides DMOS driving voltage. diode connected series DMOS been added avoid undesirable turn CBOOT selection charging choose proper CBOOT value external seen equivalent capacitor. This capacitor CEXT related total gate charge: gate gate ratio between capacitors CEXT CBOOT proportional cyclical voltage loss. CBOOT>>>CEXT e.g.: Qgate 30nC Vgate 10V, CEXT 3nF. With CBOOT 100nF drop would 300mV. supplied long time, CBOOT selection take into account also leakage losses. e.g.: steady state consumption lower than 200µA, 5ms, CBOOT supply CEXT. This charge capacitor means voltage drop internal bootstrap driver gives great advantages: external fast recovery diode avoided usually great leakage current). This structure work only VOUT close lower) meanwhile charging time (Tcharge CBOOT time which both conditions fulfilled long enough charge capacitor. bootstrap driver introduces voltage drop DMOS RDSON (typical value: frequency this drop neglected. Anyway increasing frequency must taken account. following equation useful compute drop bootstrap DMOS: gate drop dson drop dson where Qgate gate charge external power MOS, Rdson resistance bootstrap DMOS, Tcharge charging time bootstrap capacitor. 7/15 Bootstrap driver L6387E example: using power with total gate charge 30nC drop bootstrap DMOS about Tcharge 5µs. fact: 30nC drop 0.8V Vdrop taken into account when voltage drop CBOOT calculated: this drop high, circuit topology doesn't allow sufficient charging time, external diode used. Figure Bootstrap driver DBOOT VBOOT H.V. CBOOT VOUT LOAD VBOOT H.V. CBOOT VOUT LOAD D99IN1056 8/15 L6387E Typical characteristic Typical characteristic Figure time (nsec) Typical rise fall times load capacitance D99IN1054 Figure (µA) Quiescent current supply voltage D99IN1055 (nF) both high side buffers @25°C Tamb VS(V) Figure Turn time temperature Figure Turn time temperature Toff (ns) Typ. (ns) Typ. (°C) (°C) Figure Output source current temperature Figure 1000 Output sink current temperature 1000 current (mA) current (mA) Typ. Typ. (°C) (°C) 9/15 Package mechanical data L6387E Package mechanical data order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com 10/15 L6387E Package mechanical data Figure DIP-8 mechanical data package dimensions DIM. MIN. 3.18 7.95 2.54 7.62 7.62 5.08 3.81 1.52 0.125 0.51 1.15 0.356 0.204 1.65 0.55 0.304 10.92 9.75 0.313 0.100 0.300 0.300 0.260 0.200 0.150 0.060 TYP. 3.32 0.020 0.045 0.014 0.008 0.065 0.022 0.012 0.430 0.384 MAX. MIN. TYP. 0.131 MAX. inch OUTLINE MECHANICAL DATA DIP-8 11/15 Package mechanical data Figure SO-8 mechanical data package dimensions DIM. MIN. L6387E inch MAX. 1.750 MIN. TYP. MAX. 0.0689 0.0098 TYP. OUTLINE MECHANICAL DATA 0.100 1.250 0.280 0.170 4.800 5.800 3.800 4.900 6.000 3.900 1.270 0.250 0.400 1.040 0.250 0.0039 0.0492 0.480 0.0110 0.230 0.0067 0.0189 0.0091 5.000 0.1890 0.1929 0.1969 6.200 0.2283 0.2362 0.2441 4.000 0.1496 0.1535 0.1575 0.0500 0.500 0.0098 1.270 0.0157 0.0409 0.100 0.0039 0.0197 0.0500 Notes: Dimensions does include mold flash, protrusions gate burrs. Mold flash, potrusions gate burrs shall exceed 0.15mm total (both side). Dimension "E1" does include interlead flash protrusions. Interlead flash protrusions shall exceed 0.25mm side. SO-8 0016023 12/15 L6387E Order codes Order codes Table Order codes Part number L6387E L6387ED L6387ED013TR Package DIP-8 SO-8 SO-8 Packaging Tube Tube Tape reel 13/15 Revision history L6387E Revision history Table Date 11-Oct-2007 19-Sep-2008 Document revision history Revision First release Minor text changes Table Changes 14/15 L6387E Please Read Carefully: Information this document provided solely connection with products. STMicroelectronics subsidiaries ("ST") reserve right make changes, corrections, modifications improvements, this document, products services described herein time, without notice. products sold pursuant ST's terms conditions sale. 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