N-channel 0.047 MDmeshII Power MOSFET TO-247 Type STW55NM60N

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N-channel 0.047 MDmeshII Power MOSFET TO-247 Type STW55NM60N

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STW55NM60N
N-channel 0.047 MDmeshII Power MOSFET TO-247
Type STW55NM60N
VDSS (@Tjmax)
RDS(on) 0.060
100% avalanche tested input capacitance gate charge gate input resistance TO-247
Application
Switching applications
Description
This series devices designed using second generation MDmeshtechnology. This revolutionary Power MOSFET associates vertical structure company's strip layout yield world's lowest on-resistance gate charge. therefore suitable most demanding high efficiency converters. Figure Internal schematic diagram
Table
Device summary
Marking W55NM60N Package TO-247 Packaging Tube
Order code STW55NM60N
July 2008
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www.st.com
Contents
STW55NM60N
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuit
Package mechanical data Revision history
2/12
STW55NM60N
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS Gate- source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value Unit V/ns
PTOT dv/dt
Tstg
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS
Table
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-ambient Maximum lead temperature soldering purpose Value 0.36 Unit °C/W °C/W
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited max) Single pulse avalanche energy (starting IAS, Value 1600 Unit
3/12
Electrical characteristics
STW55NM60N
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS dv/dt IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions 1mA, VDD= rating rating, @125 VGS, 25.5 Min. Typ. Max. Unit V/ns
0.047 0.060
Characteristic value turn inductive load
Table
Symbol Ciss Coss Crss Coss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS=15 25.5 MHz, Min. Typ. 5800 Max. Unit
(see Figure gate bias=0 Test signal level open drain
Pulsed: Pulse duration duty cycle Coss defined constant equivalent capacitance giving same charging time Coss when increases from
4/12
STW55NM60N
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions 25.5 (see Figure Min. Typ. Max. Unit
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 25.5 di/dt A/µs (see Figure di/dt A/µs (see Figure Test conditions Typ. Unit
IRRM IRRM
Pulse width limited safe operating area Pulsed: Pulse duration duty cycle
5/12
Electrical characteristics
STW55NM60N
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Transconductance
Figure
Static drain-source resistance
6/12
STW55NM60N Figure Gate charge gate-source voltage Figure
Electrical characteristics Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source-drain diode forward characteristics
Figure Normalized BVDSS temperature
7/12
Test circuit
STW55NM60N
Test circuit
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
8/12
STW55NM60N
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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Package mechanical data
STW55NM60N
TO-247 Mechanical data
Min. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim.
10/12
STW55NM60N
Revision history
Revision history
Table
Date 06-Nov-2007 19-Dec-2007 16-Jan-2008 31-Jul-2008
Document revision history
Revision Initial release Figure Capacitance variations been updated Document status promoted from preliminary data datasheet. value been updated Table Changes
11/12
STW55NM60N
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N-channel 0.047 MDmeshII Power MOSFET TO-247 Type STW55NM60N

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