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N-channel 0.070 SO-8 STripFETPower MOSFET Type STS4DNF60 VDS
Top Searches for this datasheetSTS4DNF60 N-channel 0.070 SO-8 STripFETPower MOSFET Type STS4DNF60 VDSS RDS(on) <0.090 Standard outline easy automated surface mount assembly threshold drive SO-8 Description This Power MOSFET latest development STMicroelectronics unique "single feature size" strip-based process. resulting transistor shows extremely high packing density onresistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. Figure Internal schematic diagram Application Switching applications Table Device summary Marking 4DF60 Package SO-8 Packaging Tape reel Order code STS4DNF60 August 2007 1/12 www.st.com Contents STS4DNF60 Contents Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history 2/12 STS4DNF60 Electrical ratings Electrical ratings Table Symbol Absolute maximum ratings Parameter Drain-source voltage (VGS Gate- source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Operating junction temperature Storage temperature Value Unit PTOT(2) Tstg Pulse width limited safe operating area PTOT=1.6W single operation Table Symbol Thermal data Parameter Value 62.5 Unit °C/W Rthj-pcb Thermal resistance junction-pcb D.O.(1) When mounted FR-4 board, 10sec, dual operation 3/12 Electrical characteristics STS4DNF60 Electrical characteristics (Tcase =25°C unless otherwise specified) Table Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) /off states Parameter Drain-source breakdown voltage Test conditions 250µA, Min. 0.070 0.090 Typ. Max. Unit rating Zero gate voltage drain current (VGS rating, TC=125°C Gate-body leakage current (VDS Gate threshold voltage VGS, 250µA Static drain-source resistance 10V, Table Symbol Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions =25V, Min. Typ. Max. Unit MHz, 48V, (see Figure 4/12 STS4DNF60 Electrical characteristics Table Symbol td(on) td(off) Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions 30V, 4.7, (see Figure 30V, 4.7, (see Figure Min. Typ. Unit Table Symbol ISDM IRRM IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt 100A/µs 20V, 25°C (see Figure di/dt 100A/µs 20V, 150°C (see Figure Test conditions Min. Typ. Max. Unit Pulse width limited safe operating area Pulsed: Pulse duration duty cycle 1.5% 5/12 Electrical characteristics STS4DNF60 Figure Electrical characteristics (curves) Safe operating area Figure Thermal impedance Figure Output characteristics Figure Transfer characteristics Figure Source-drain diode forward characteristics Figure Static drain-source resistance 6/12 STS4DNF60 Figure Gate charge gate-source voltage Figure Electrical characteristics Capacitance variations Figure Normalized gate threshold voltage temperature Figure Normalized resistance temperature 7/12 Test circuits STS4DNF60 Test circuits Figure Gate charge test circuit Figure Switching times test circuit resistive load Figure Test circuit inductive load Figure Unclamped Inductive load test switching diode recovery times circuit Figure Unclamped inductive waveform Figure Switching time waveform 8/12 STS4DNF60 Package mechanical data Package mechanical data order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com 9/12 Package mechanical data STS4DNF60 SO-8 MECHANICAL DATA DIM. 1.27 3.81 1.27 (max.) 0.14 0.015 0.65 0.35 0.19 0.25 MIN. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 10/12 STS4DNF60 Revision history Revision history Table Date 17-May-2007 02-Aug-2007 Revision history Revision First release Marking been updated Changes 11/12 STS4DNF60 Please Read Carefully: Information this document provided solely connection with products. 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Information this document supersedes replaces information previously supplied. logo registered trademark STMicroelectronics. other names property their respective owners. 2007 STMicroelectronics rights reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America www.st.com 12/12 Other recent searchesTK774XXA - TK774XXA TK774XXA Datasheet SV6131US - SV6131US SV6131US Datasheet Si4913DY - Si4913DY Si4913DY Datasheet PD8043 - PD8043 PD8043 Datasheet PD8933 - PD8933 PD8933 Datasheet PD893D3 - PD893D3 PD893D3 Datasheet MIM-5xx5K8 - MIM-5xx5K8 MIM-5xx5K8 Datasheet M61519FP - M61519FP M61519FP Datasheet LT3486 - LT3486 LT3486 Datasheet KCH30A10 - KCH30A10 KCH30A10 Datasheet
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