N-channel 0.0035 120A D2PAK TO-220 planar STripFETPower MOSFET Ty
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STP200N4F3 STB200N4F3
N-channel 0.0035 120A D2PAK TO-220 planar STripFETPower MOSFET
Type STB200N4F3 STP200N4F3
VDSS
RDS(on) <0.0040 <0.0044
120A 120A
300W 300W
100% avalanche tested Standard threshold drive
TO-220
Applications
Switching applications Automotive
Description
Figure This Power MOSFET latest development STMicroelectronics unique "single feature sizeTM" strip-based process. resulting transistor shows extremely high packing density onresistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. this improved device been specifically designed automotive applications. Internal schematic diagram
Table
Device summary
Marking 200N4F3 200N4F3 Package TO-220 Packaging Tape reel Tube
Order codes STB200N4F3 STP200N4F3
October 2007
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www.st.com
Contents
STB200N4F3 STP200N4F3
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuit
Package mechanical data Packaging mechanical data Revision history
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STB200N4F3 STP200N4F3
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage Gate-source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Derating factor Value Unit W/°C V/ns
PTOT dv/dt(4) Tstg
Single pulse avalanche energy Peak diode recovery voltage slope Operating junction temperature Storage temperature
Current limited package Pulse width limited safe operating area Starting 25°C, 60A, VDD= 60A, di/dt A/µs, V(BR)DSS, TJMAX.
Table
Symbol Rthj-case Rthj-pcb
Thermal data
Value Parameter TO-220 Thermal resistance junction-case Thermal resistance junction-pcb Thermal resistance junction-ambient -62.5 0.50 °C/W °C/W °C/W Unit
Rthj-amb
When mounted FR-4 board,
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Electrical characteristics
STB200N4F3 STP200N4F3
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Gate body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions 250µA, VGS= rating, rating @125°C ±20V VDS= VGS, 250µA VGS= 10V, TO-220 Min.
±100
Typ.
Max.
Unit
0.0035 0.0040 0.0040 0.0044
Table
Symbol Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions =10V, Min. Typ. 5100 1270 Max. Unit
=25V, MHz, VGS=0
VDD=20V, 120A =10V (see Figure
Pulsed: pulse duration=300µs, duty cycle 1.5%
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STB200N4F3 STP200N4F3
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Test conditions VDD=20 ID=60A, RG=4.7, VGS=10V (see Figure VDD=20 ID=60A, RG=4.7, VGS=10V (see Figure Unit
Table
Symbol ISDM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VGS=0 ISD=120A, di/dt 100A/µs, VDD=20 Tj=150°C (see Figure Test conditions Unit
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Electrical characteristics
STB200N4F3 STP200N4F3
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Normalized BVDSS temperature
Figure
Static drain-source resistance
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STB200N4F3 STP200N4F3 Figure Gate charge gate-source voltage Figure
Electrical characteristics Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source-drain diode forward characteristics
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Test circuit
STB200N4F3 STP200N4F3
Test circuit
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped Inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
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STB200N4F3 STP200N4F3
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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Package mechanical data
STB200N4F3 STP200N4F3
mechanical data
2.49 0.03 1.14 0.45 1.23 8.95 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.50 0.055 0.094 10.4 0.393 2.69 0.23 0.93 1.36 9.35 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352
inch 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.409 0.334 0.208 0.625 0.55 0.68 0.126 0.015
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STB200N4F3 STP200N4F3
Package mechanical data
TO-220 mechanical data
4.40 0.61 1.14 0.49 15.25 1.27 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019
inch 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Packaging mechanical data
STB200N4F3 STP200N4F3
Packaging mechanical data
D2PAK FOOTPRINT
TAPE REEL SHIPMENT
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE 1000
sales type
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STB200N4F3 STP200N4F3
Revision history
Revision history
Table
Date 02-Mar-2007 02-Oct-2007
Document revision history
Revision First release Added TO-220 package Changes
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STB200N4F3 STP200N4F3
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