N-channel 0.06 TO-220/TO-220FP STripFETII Power MOSFET Type STP20

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N-channel 0.06 TO-220/TO-220FP STripFETII Power MOSFET Type STP20

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STP20NF06 STF20NF06
N-channel 0.06 TO-220/TO-220FP STripFETII Power MOSFET
Type STP20NF06 STF20NF06 VDSS RDS(on) <0.07 <0.07 20A(1)
Refer allowable current value FP-type value
Avalanche rugged technology 100% avalanche tested 175oC operating temperature High dv/dt capability Application oriented characterization
TO-220
TO-220FP
Description
This Power MOSFET latest development STMicroelectronics unique "Single Feature SizeTM" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility.
Internal schematic diagram
Application
Switching applications
Order codes
Part number STP20NF06 STF20NF06 Marking P20NF06 F20NF06 Package TO-220 TO-220FP Packaging Tube Tube
2007
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www.st.com
Contents
STP20NF06 STF20NF06
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuit
Package mechanical data Revision history
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STP20NF06 STF20NF06
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Value Parameter TO-220 Drain-source voltage (VGS Gate- source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Derating factor -2500 20(1) 14(1) 80(1) 0.18 TO-220FP W/°C V/ns Unit
Ptot
dv/dt
Peak diode recovery voltage slope Single pulse avalanche energy Insulation withstand voltage (RMS) from three leads external heat sink (t=1s;TC=25°C) Storage temperature
VISO Tstg
Max. operating junction temperature
Refer allowable current value FP-type value Pulse width limited safe operating area. 20A, di/dt 200A/µs, V(BR)DSS, TJMAX Starting 10A,
Table
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-ambient Maximum lead temperature soldering purpose TO-220 62.5 TO-220FP 5.35 Unit °C/W °C/W
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Electrical characteristics
STP20NF06 STF20NF06
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions 250µA, ratings ratings, 125°C VGS, 250µA 10V, 0.06 Min. ±100 0.07 Typ. Max. Unit
IDSS
IGSS VGS(th) RDS(on)
Table
Symbol Ciss Coss Crss td(on) td(off)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions 15V, Min. Typ. Max. Unit
25V, 1MHz,
30V, (see Figure 30V, 20A, (see Figure
Pulsed: Pulse duration duty cycle 1.5%.
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STP20NF06 STF20NF06
Electrical characteristics
Table
Symbol ISDM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage 20A, Test conditions Min. Typ. Max. Unit
20A, Reverse recovery time di/dt 100A/µs, Reverse recovery charge 20V, 150°C Reverse recovery current (see Figure
Pulse width limited safe operating area. Pulsed: Pulse duration duty cycle 1.5%
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Electrical characteristics
STP20NF06 STF20NF06
Figure
Electrical characteristics (curves)
Safe operating area TO-220 Figure Thermal impedance TO-220
Figure
Safe operating area TO-220FP
Figure
Thermal impedance TO-220FP
Figure
Output characteristics
Figure
Transfer characteristics
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STP20NF06 STF20NF06 Figure Transconductance Figure
Electrical characteristics Static drain-source resistance
Figure
Gate charge gate-source voltage Figure Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
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Electrical characteristics Figure Source-drain diode forward characteristics
STP20NF06 STF20NF06 Figure Normalized BVDSS temperature
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STP20NF06 STF20NF06
Test circuit
Test circuit
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped Inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
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Package mechanical data
STP20NF06 STF20NF06
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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STP20NF06 STF20NF06
Package mechanical data
TO-220FP MECHANICAL DATA
MIN. 0.45 0.75 1.15 1.15 4.95 28.6 15.9 30.6 10.6 16.4 1.126 .0385 0.114 0.626 0.354 0.118 MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM.
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Package mechanical data
STP20NF06 STF20NF06
TO-220 MECHANICAL DATA
DIM. MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
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STP20NF06 STF20NF06
Revision history
Revision history
Table
Date 07-Dec-2004 09-Aug-2006 30-May-2007
Revision history
Revision First version document been reformatted Modified part number Changes
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STP20NF06 STF20NF06
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N-channel 0.06 TO-220/TO-220FP STripFETII Power MOSFET Type STP20

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