CHANNEL 900V 6.3A TO-247 PowerMESHMOSFET TYPE W6NB90 DS(on)

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CHANNEL 900V 6.3A TO-247 PowerMESHMOSFET TYPE W6NB90 DS(on)

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STW6NB90
CHANNEL 900V 6.3A TO-247 PowerMESHMOSFET
TYPE W6NB90
DS(on)
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprietary edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVE HIGH CURRENT, HIGH SPEED SWITCHING
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol dv/dt( Parameter Drain-source Voltage Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Value 1.28
di/dt A/µs, V(BR)DSS, TJMAX
V/ns
Pulse width limited safe operating area
February 1999
STW6NB90
THERMAL DATA
-case
Rthj -amb
thc-sink
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
0.78
oC/W
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Max. Unit
Rating Zero Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Test ditions Min. Max. Unit
Static Drain-source Resistance
State Drain Current ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test ditions ID(o DS(on Min. 1400 Max. Unit
STW6NB90
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test ditions (see test circuit, figure Min. Max. Unit
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test ditions (see test circuit, figure Min. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs (see test circuit, figure Test ditions Min. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STW6NB90
TO-247 MECHANICAL DATA
MIN. 3.55 15.3 19.7 14.2 34.6 3.65 0.079 0.140 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
STW6NB90
Information furnished believed accurate reliable. However, STMicroelect onics assumes responsibil consequences such information infringement patents other rights third partes which result from use. license granted implication otherwise under patent patent rights STMicroelectro nics. Specific ation mentioned this publication subjec change without notice. This publication supersedes replaces informaton previously supplied. STMicroelectronics products authorized critical components life support devices systems with express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysi Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com

CHANNEL 900V 6.3A TO-247 PowerMESHMOSFET TYPE W6NB90 DS(on)

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