CHANNEL 200V 0.70 DPAK PowerMESHMOSFET TYPE D5NB20 DS(on)

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CHANNEL 200V 0.70 DPAK PowerMESHMOSFET TYPE D5NB20 DS(on)

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STD5NB20
CHANNEL 200V 0.70 DPAK PowerMESHMOSFET
TYPE D5NB20
DS(on)
TYPICAL RDS(on) =0.7 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TROUGH-HOLE VERSION CONTACT SALES OFFICE
DPAK TO-252 (Suffix "T4")
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprietary edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS HIGH EFFICIENCY DC-DC CONVERTERS DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol dv/dt( Parameter Drain-source Voltage (VGS Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Value 0.36
di/dt A/µs, V(BR)DSS, TJMAX
V/ns
Pulse width limited safe operating area
December 1998
STD5NB20
THERMAL DATA
-case
Rthj -amb
thc-sink
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
2.78
oC/W
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions =2.5 Min. Typ. Max. Unit
ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on =2.5 Min. Typ. 10.5 Max. Unit
STD5NB20
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on Time Rise Time Total Charge Gate-Source Charge Gate-Drain Charge Test ditions Min. Typ. Max. 13.5 Unit
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Fall Cross-over Time Test ditions Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs Test ditions Min. Typ. Max. 12.12 Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STD5NB20
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
STD5NB20
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com

CHANNEL 200V 0.70 DPAK PowerMESHMOSFET TYPE D5NB20 DS(on)

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