CHANNEL 250V 0.95 DPAK/IPAK PowerMESHMOSFET STD4NB25 DS(on)

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

CHANNEL 250V 0.95 DPAK/IPAK PowerMESHMOSFET STD4NB25 DS(on)

Datasheet Thumbnail

Top Searches for this datasheet

STD4NB25
CHANNEL 250V 0.95 DPAK/IPAK PowerMESHMOSFET
STD4NB25
DS(on)
TYPICAL RDS(on) 0.95 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TROUGH-HOLE VERSION CONTACT SALES OFFICE IPAK TO-251 (Suffix "-1")
DPAK TO-252 (Suffix "T4")
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprietary edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb Parameter Drain-source Voltage Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating actor dv/dt(1 Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction emperature
Value 0.32
di/dt A/µs, V(BR)DSS, TJMAX
Unit V/ns
Pulse width limited safe operating area
February 2000
STD4NB25
THERMAL DATA
thj-
Rthj-
-sin
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead emperature Soldering Purpose
3.12
oC/W
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo BR)DSS Parameter Drain-source Breakdown Voltage Test Cond itions Min. Max.
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current
Symbo GS(th DS(on D(on) Parameter Gate hreshold Voltage Static Drain-source Resistance Test Cond itions Min. 0.95 Max.
State Drain Current D(on DS(on )max
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ansfer Capacitance Test Cond itions D(on DS(on )max Min. Max.
STD4NB25
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo Parameter Turn-on Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond itions Min. Max.
SWITCHING
Symbo r(Vof Parameter Off-voltage Rise Time Fall Time Cross-over Test Cond itions Min. Max.
SOURCE DRAIN DIODE
Symbo IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Cond itions Min. Max.
di/dt A/µs
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STD4NB25
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
STD4NB25
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
STD4NB25
Information furnished believed accurate reliable. However, STMicroelectonics assumes responsibil consequences such information infringement patents other rights third partes which result from use. license granted implication otherwise under patent patent rights STMicroelectro nics. Specification mentioned this publication subject change without notice. This publication supersedes replaces informaton previously supplied. STMicroelectronics products authorized critical components life support devices systems with express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japa Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A.
http://www.st.com

CHANNEL 250V 0.95 DPAK/IPAK PowerMESHMOSFET STD4NB25 DS(on)

Top Searches for this datasheet

Other recent searches