CHANNEL 1000V 4.3A TO-247 PowerMESHMOSFET TYPE W5NB100 1000

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CHANNEL 1000V 4.3A TO-247 PowerMESHMOSFET TYPE W5NB100 1000

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STW5NB100
CHANNEL 1000V 4.3A TO-247 PowerMESHMOSFET
TYPE W5NB100
1000
DS(on)
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY GATE SOURCE VOLTAGE RATING 100% AVALANCHE TESTED INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, SGS-Thomson designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprietary edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) DC-AC CONVERTER WELDING EQUIPMENT UNINTERRUPTABLE POWER SUPPLY MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS
Symbol VDGR Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor dv/dt June 1998 Peak Diode Recovery voltage slope orage Temperature Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value 1000 1000 1.28
di/dt A/µs, V(BR)DSS, TJMAX
Pulse width limited safe operating area
STW5NB100
THERMAL DATA
hj-ca thc- Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 0.78 62.5
AVALANCHE CHARACTERISTICS
Symb Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symb (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition Min. 1000 Max.
Rating Zero Voltage Drain Current (VGS Rating Gate-body Leakage Current
Symb GS(th) ID(o Parameter Gate Threshold Voltage Test Cond ition Min. Max.
Static Drain-source Resistance
State Drain Current D(on) DS(on)
DYNAMIC
Symb Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test Cond ition D(on) DS(on) Min. 1400 1800 Max.
STW5NB100
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symb d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition Min. Max.
SWITCHING
Symb r(Vof Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition Min. Max.
SOURCE DRAIN DIODE
Symb Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs 14.5 Test Cond ition Min. Max.
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STW5NB100
TO-247 MECHANICAL DATA
MIN. 3.55 15.3 19.7 14.2 34.6 3.65 0.079 0.140 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
STW5NB100
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A.

CHANNEL 1000V 4.3A TO-247 PowerMESHMOSFET TYPE W5NB100 1000

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