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PRELIMINARY DATA TYPE W5NA100 H5NA100FI 1000 1000 DS(on)


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STW5NA100 STH5NA100FI
PRELIMINARY DATA TYPE W5NA100 H5NA100FI
1000 1000
DS(on)
TYPICAL RDS(on) GATE SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD TO-247
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVE
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Valu W5NA100 VDGR Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor Insulation ithstand Voltage (DC) Storage emperature Max. perating Junction emperature
STH5NA100F 18.4 0.48 4000
1000 1000 18.4
Pulse width limited safe operating area
October 1997
STW5NA100-STH5NA100FI
THERMAL DATA
O-247 hj-ca thc- Thermal Resistance Junction-case 0.83 ISOW
Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symb Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symb (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition Min. 1000 ±100 Max.
Zero Voltage Rating Drain Current (VGS Rating Gate-body Leakage Current
Symb GS(th) ID(o Parameter Gate Threshold Voltage Test Cond ition Min. 2.25 Max. 3.75
Static Drain-source Resistance
State Drain Current D(on) DS(on)
DYNAMIC
Symb Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test Cond ition D(on) DS(on) Min. 1650 2150 Max.
STW5NA100-STH5NA100FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symb d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition 26.5 Min. Max.
SWITCHING
Symb r(Vof Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition 4.2A Min. Max.
SOURCE DRAIN DIODE
Symb Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs 1000 Test Cond ition Min. Max. 18.4
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STW5NA100-STH5NA100FI
TO-247 MECHANICAL DATA
MIN. 3.55 15.3 19.7 14.2 34.6 3.65 0.079 0.140 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
STW5NA100-STH5NA100FI
ISOWATT218 MECHANICAL DATA
DIM. MIN. 5.35 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 TYP. MAX. 5.65 2.08 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090
P025C
STW5NA100-STH5NA100FI
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics Printed Italy Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil Canada- China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

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