HIGH VOLTAGE SILICON POWER TRANSISTOR STMicroelectronics PREFERRE

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HIGH VOLTAGE SILICON POWER TRANSISTOR STMicroelectronics PREFERRE

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BU326A
HIGH VOLTAGE SILICON POWER TRANSISTOR
STMicroelectronics PREFERRED SALESTYPE TRANSISTOR FAST SWITCHING SPEED
APPLICATIONS: POWER SUPPLIES LINEAR SWITCHING INDUSTRIAL EQUIPMENT
TO-3
DESCRIPTION BU326A silicon multiepitaxial mesa transistor Jedec TO-3 metal case particularly intended switch-mode supply system.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Collector-Emitter Voltage (VBE Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation case Storage emperature Max. perating Junction Temperature Value
December 2000
BU326A
THERMAL DATA
hj-ca Thermal Resistance Junction-case 2.33
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symb Parameter Collector Cut-off Current Emitter Cut-off Current nditi
Min.
Typ.
Max.
CEO(sus Collector-Emitter Sustaining Voltage(I CE(sat BE(s Collector-Emitter Saturation Voltage Base-Emitt Saturation Voltage Current Gain Turn-on Time Storage Time Fall Time
1.25 1.25
Pulsed: Pulse duration duty cycle
BU326A
TO-3 MECHANICAL DATA
MIN. 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P003F
BU326A
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