CHANNEL 500V IPAK/DPAK PowerMESHMOSFET PRELIMINARY DATA TYPE STD3

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CHANNEL 500V IPAK/DPAK PowerMESHMOSFET PRELIMINARY DATA TYPE STD3

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STD3NB50
CHANNEL 500V IPAK/DPAK PowerMESHMOSFET
PRELIMINARY DATA TYPE STD3NB50
DS(on)
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DPAK TO-252
(Suffix "T4")
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, SGS-Thomson designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprietary edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVE
IPAK TO-251 (Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol dv/dt( 1998 Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating actor Peak Diode Recovery voltage slope Storage emperature Max. perating Junction Temperature
Value
di/dt A/µs, V(BR)DSS, TJMAX
Pulse width limited safe operating area
This preliminary information product development undergoing evaluation. Details subject change without notice.
STD3NB50
THERMAL DATA
hj-ca
Rthj -amb
thc-
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
oC/W
AVALANCHE CHARACTERISTICS
Symb Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symb (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition Min. Max.
Rating Zero Voltage Drain Current (VGS Rating Gate-body Leakage Current
Symb GS(th) ID(o Parameter Gate Threshold Voltage Test Cond ition =1.9 Min. Max.
Static Drain-source Resistance
State Drain Current D(on) DS(on)
DYNAMIC
Symb Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test Cond ition D(on) DS(on) Min. Max.
STD3NB50
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symb d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition =3.8 Min. Max.
SWITCHING
Symb r(Vof Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition Min. Max.
SOURCE DRAIN DIODE
Symb Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Cond ition Min. Max. 15.2
di/dt A/µs
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STD3NB50
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
STD3NB50
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
STD3NB50
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics Printed Italy Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

CHANNEL 500V IPAK/DPAK PowerMESHMOSFET PRELIMINARY DATA TYPE STD3

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