CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER TRANSISTOR PR

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CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER TRANSISTOR PR

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STW80N06-10
CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER TRANSISTOR
PRELIMINARY DATA TYPE 80N06-10
DS(on) 0.010
TYPICAL RDS(on) 0.0085 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION
TO-247
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING POWER MOTOR CONTROL DC-DC DC-AC CONVERTERS SYNCRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb Parameter Drain-source Voltage Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Peak Diode Recovery voltage slope Storage emperature Max. Operating Junction Temperature
Value
V/ns
Pulse width limited safe operating area
October 1998
STW80N06-10
THERMAL DATA
-case -amb thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 0.83 62.5
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Repetitive Avalanche Energy (pulse width limited max, Avalanche Current, Repetitive Not-Repetitive pulse width limited max, Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions Min. Typ. 0.0085 Max. 0.01 0.02 Unit
ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on Min. Typ. 5900 Max. Unit
STW80N06-10
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) (di/dt) Parameter Turn-on Time Rise Time Turn-on Current Slope Test ditions (see test circuit, figure (see test circuit, figure Min. Typ. Max. Unit A/µs
Total Charge Gate-Source Charge Gate-Drain Charge
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Fall Cross-over Time Test ditions (see test circuit, figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs (see test circuit, figure Test ditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area di/dt A/µs, V(BR)DSS, TJMAX
STW80N06-10
TO-247 MECHANICAL DATA
MIN. 3.55 15.3 19.7 14.2 34.6 3.65 0.079 0.140 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
STW80N06-10
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CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER TRANSISTOR PR

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