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RUGGEDIZED VSWR INPUT MATCHING THERMAL RESISTANCE CLASS OPERATION MIN.
Top Searches for this datasheetMSC1000M RUGGEDIZED VSWR INPUT MATCHING THERMAL RESISTANCE CLASS OPERATION MIN. WITH 10.8 GAIN .280 2LFL (S058) epoxy sealed ORDER CODE MSC1000M BRANDING 1000M CONNECTION DESCRIPTION MSC1000M Class common emitter transistor with emitter ballasted Matrix geometry specifically designed DME/IFF driver applications. This device capable withstanding load VSWR phase angle under full rated conditions. thermal resistance semi-automatic wire bonding techniques ensure high reliability product consistency. MSC1000M housed IMPACpackage with internal input matching. ABSOLUTE MAXIMUM RATINGS case Symbol Parameter Value Unit Collector Emitter Base Emitter PDISS Power Dissipation* Device Current* (See Safe Area) +150 Collector-Emitter Bias Voltage* Junction Temperature (Pulsed Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* °C/W *Applies only rated amplifier operation October 1992 MSC1000M ELECTRICAL SPECIFICATIONS case STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICES DYNAMIC Symbol 100mA Test Conditions Value Min. Typ. Max. Unit POUT Note: 1025 1150 1025 1150 10.8 0.85 12.3 TYPICAL PERFORMANCE Pulse idth Duty Cycle 120mA BROADBAND POWER AMPLIFIER NARROWBAND POWER OUTPUT FREQUENCY MAXIMUM OPERATING AREA FORWARD BIAS OPERATION MSC1000M TYPICAL S-PARAMETERS ohms MSC1000M TEST CIRCUIT Ref.: C127297 dimensions inches. PACKAGE MECHANICAL DATA MSC1000M Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized ascritical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A Other recent searchesMF1PLUSx0y1 - MF1PLUSx0y1 MF1PLUSx0y1 Datasheet ICS525-01 - ICS525-01 ICS525-01 Datasheet ICS307 - ICS307 ICS307 Datasheet ICS527-01 - ICS527-01 ICS527-01 Datasheet HER1601CS - HER1601CS HER1601CS Datasheet HER1605CS - HER1605CS HER1605CS Datasheet HA0004E - HA0004E HA0004E Datasheet HA0005E - HA0005E HA0005E Datasheet HA0011E - HA0011E HA0011E Datasheet HA0013E - HA0013E HA0013E Datasheet HA0075E - HA0075E HA0075E Datasheet HA0102E - HA0102E HA0102E Datasheet DDXi-2161 - DDXi-2161 DDXi-2161 Datasheet DDXi-2101 - DDXi-2101 DDXi-2101 Datasheet DDXi-2161 - DDXi-2161 DDXi-2161 Datasheet DDXi-2101 - DDXi-2101 DDXi-2101 Datasheet 2SK3531-01 - 2SK3531-01 2SK3531-01 Datasheet 1N5819 - 1N5819 1N5819 Datasheet 1N6761 - 1N6761 1N6761 Datasheet
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