EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON

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EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON

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BU806/807
EPITAXIAL SILICON DARLINGTON TRANSISTOR
FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING HORIZONTAL OUTPUT STAGES 110° VIDEO DISPLAYS
BUILT-IN SPEED-UP Diode Between Base Emitter
TO-220
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector-Base Voltage BU806 BU807 Collector-Emitter Voltage BU806 BU807 Emitter-Base Voltage Collector Current Collector Peck Current Base Current Junction Temperature Storage Temperature Collector Dissipation C=25 VEBO VCEO ~150 Symbol VCBO Rating Unit
1.Base 2.Collector 3.Emitter
ELECTRICAL CHARACTERISTICS =25)
Characteristic Collector-Emitter Sustaining Voltage BU806 BU807 Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Damper Diode Forward Voltage BU806 BU807 BU806 BU807 IEBO VCE(sat) VBE(sat) ICES ICEV Symbol VCEO (sus)
Unit
Test Conditions 100mA, 400V, 330V, 400V, 330V, 50mA 50mA
Pulsed pulsed duration 300uS, duty cycle 1.5%
BU806/807
EPITAXIAL SILICON DARLINGTON TRANSISTOR

EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON

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