Drive MOSFET RSS065N06 Structure Silicon N-channel MOSFET Di

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Drive MOSFET RSS065N06 Structure Silicon N-channel MOSFET Di

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RSS065N06
Drive MOSFET
RSS065N06
Structure Silicon N-channel MOSFET Dimensions (Unit
SOP8
Features on-resistance. Built-in Protection Diode. Small Surface Mount Package (SOP8).
Application Switching Packaging specifications
Package Type RSS065N06 Code Basic ordering unit (pieces) Taping 2500
Each lead same dimensions
Equivalent circuit
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
PROTECTION DIODE BODY DIODE
protection diode included between gate source terminals protect diode against static electricity when product use. protection circuit when fixed voltages exceeded.
Absolute maximum ratings 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS VGSS ±6.5 Tstg +150 Unit
Total power dissipatino Channel temperature Range storage temperature
Pw10s, Duty cycle1% Mounted ceramic board.
Thermal resistance
Parameter Channel ambient
Mounted ceramic board.
Symbol (ch-A)
Limits 62.5
Unit
RSS065N06
Electrical characteristics 25°C)
Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
(on)
Ciss Coss Crss (on) (off)
Min.
Typ.
Max.
Unit
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=6.5A, VGS=10V ID=6.5A, VGS=4.5V ID=6.5A, VGS=4.0V ID=6.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.3A, VGS=10V RL=9.1 RG=10 ID=6.5A, VGS=5V RL=4.6, RG=10
Body diode characteristics (Source-Drain) 25°C)
Parameter Forward voltage
Pulsed
Symbol
Min.
Typ.
Max.
Unit
Conditions IS=1.6A, VGS=0V
RSS065N06
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
VDS=10V Pulsed
DRAIN CURRENT
Ta=125°C Ta=75°C Ta=25°C -25°C
Ta=125°C Ta=75°C Ta=25°C -25°C
VGS=10V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
1000
1000
Ta=125°C Ta=75°C Ta=25°C -25°C
VGS=4.5V Pulsed
0.01
0.001
0.01
0.01
GATE-SOURCE VOLTAGE
DRAIN CURRENT
DRAIN CURRENT
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance Drain Current()
Fig.3 Static Drain-Source On-State Resistance Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
VGS=4V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
1000
10000
ID=6.5A ID=3.25A
Ta=25°C Pulsed
Ta=25°C f=1MHz VGS=0V
CAPACITANCE (pF)
1000
Ciss
Coss
Crss
0.01
0.01
DRAIN CURRENT
GATE-SOURCE VOLTAGE
DRAIN-SOURCE VOLTAGE
Fig.4 Static Drain-Source On-State Resistance Drain Current()
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
Fig.6 Typical Capacitance Drain-Source Voltage
10000
GATE-SOURCE VOLTAGE
1000
td(off)
SOURCE CURRENT
SWITCHING TIME (ns)
Ta=25°C VDD=30V VGS=10V RG=10 Pulsed
Ta=25°C VDD=30V ID=6.5A RG=10 Pulsed
VGS=0V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
td(on)
0.01
0.01
DRAIN CURRENT
TOTAL GATE CHARGE (nC)
SOURCE-DRAIN VOLTAGE
Fig.7 Switching Characteristics
Fig.8 Dynamic Input Characteristics
Fig.9 Source Current Source-Drain Voltage
RSS065N06
Measurement circuit
Pulse Width
D.U.T.
td(on) td(off) toff
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
(Const.) D.U.T.
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction which would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. priority supply products with utmost quality reliability. However, there always chance failure unexpected factors. Therefore, please take into account derating characteristics allow sufficient safety features, such extra margin, anti-flammability, fail-safe measures when designing order prevent possible accidents that result bodily harm fire caused component failure. ROHM cannot held responsible damages arising from products under conditions range specifications non-compliance with NOTES specified this catalog.
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Appendix1-Rev2.0

Drive MOSFET RSS065N06 Structure Silicon N-channel MOSFET Di

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