Drive MOSFET RQA180N03 Structure Silicon N-channel MOSFET Di

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Drive MOSFET RQA180N03 Structure Silicon N-channel MOSFET Di

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RQA180N03
Drive MOSFET
RQA180N03
Structure Silicon N-channel MOSFET Dimensions (Unit
PSOP8S
Features on-resistance. Built-in Protection Diode. Small Surface Mount Package (PSOP8S).
Application Switching Equivalent circuit
Packaging specifications
Package Type RQA180N03 Code Basic ordering unit (pieces) Taping 2500
Protection Diode. Body Diode.
Source Source Source Gate Drain Drain Drain Drain
Absolute maximum ratings 25°C)
Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Source current (Body diode) Continuous Pulsed Symbol VDSS VGSS IDP3 Total power dissipation Channel temperature Range storage temperature
Ta=25°C Ta=70°C Pw10µs, Duty cycle1% When mounted 40mm board.
protection diode included between gate source terminals protect diode against static electricity when product use.Use protection circuit when fixed voltage exceeded.
Limits +150
Unit
Tstg
RQA180N03
Thermal resistance
Parameter Channel ambient Channel lead Channel case
Steady state Pw=10 When mounted 40mm Board
Symbol (ch-a) (ch-l) (ch-c)
Limits 44.6 22.0 16.0 15.0
Unit
Electrical characteristics 25°C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate Threshold Voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Symbol
IGSS (BR)DSS IDSS (th) (on) Ciss Coss Crss td(on) td(off)
Min.
0.95
Typ.
4210
Max.
Unit
Test Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=18A, VGS=10V ID=14A, VGS=4.5V ID=14A, VGS=4V ID=9A, VDS=10V VDS=20V VGS=0V f=1MHz ID=1A, VGS=10V RL=15 RG=3 VGS=5V ID=18A
Body diode characteristics (Source-Drain) 25°C)
Parameter Forward voltage Reverce recovery time Reverce recovery charge
Pulsed
Symbol
Min.
Typ.
Max.
Unit
Test Conditions Is=18A, VGS=0V IF=9A di/dt=100A/µs
RQA180N03
Electrical characteristic curves
DRAIN CURRENT DRAIN CURRENT ID[A] VGS=2.5V DRAIN-SOURCE VOLTAGE VDS[V] VGS=10V VGS=4.5V VGS=4.0V VGS=3.5V VGS(th)VARIANCE(V) 0.01 0.001 GATE-SOURCE VOLTAGE Ta=125 VDS=10V Pulsed -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 VDS=10V Pulsed
JUNCTION TEMPERATUREj
Fig.1 Output Characteristics
Fig.2 Typical Transfer Characteristics
Fig.3 ThresholdVoltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCERDS(on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCERDS(on)
ON-STATE RESISTANCERDS(on) (Normaralized)[m] Ta=25 Pulsed
VGS=10V Pulsed
GATE-SOURCE VOLTAGE ID=18A
Ta=25 Pulsed
VGS=4V VGS=4.5V
VGS=10V DRAIN CURRENT
JUNCTION TEMPERATUREj
Fig.4 Static Drain-Source On-State Resistance Drain Current
Fig.5 On-State ResistanceRDS(on)(Normaralized)
Fig.6 Static Drain-Source On-State Resistance Gate-Source Voltage
GATE-SOURCE VOLTAGE
SOURCE CURRENT Ta=125 VGS=0V Pulsed
CAPACITANCE [pF]
Ta=25 VDD=15V ID=18A RG=10 Pulsed
10000
Ciss
1000
Coss
Crss
Ta=25 f=1MHz VGS=0V
0.01 SOURCE-DRAIN VOLTAGE
0.01 DRAIN-SOURCE VOLTAGE
TOTAL GATE CHARGE [nC]
Fig.7 Source Current Source-Drain Voltage
Fig.8 Dynamic Input Characteristics
Fig.9 Typical Capacitance Drain-Source Voltage
RQA180N03
NORMARIZED TRANSIENT THERMAL RESISTANCE
DRAIN CURRENT
10ms
Operation this area limited RDS(ON) operation 10.0V Single Pulse MOUNTED BOARD
0.01 Single Pulse
0.01
0.01
0.001 0.001
DutyCycle 0.05 0.02
Single Pulse Rthch-at Rthch-a 44.6 <Mounted CUPPER board>
0.01
1000
DRAIN SOURCE VOLTAGE
PULSE WIDTH Pw(s)
Fig.10 MaximumSafeOperatingArea
Fig.11 Normarized Transient Tremal Resistance Pulse idth
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction which would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. priority supply products with utmost quality reliability. However, there always chance failure unexpected factors. Therefore, please take into account derating characteristics allow sufficient safety features, such extra margin, anti-flammability, fail-safe measures when designing order prevent possible accidents that result bodily harm fire caused component failure. ROHM cannot held responsible damages arising from products under conditions range specifications non-compliance with NOTES specified this catalog.
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Appendix1-Rev2.0

Drive MOSFET RQA180N03 Structure Silicon N-channel MOSFET Di

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