Drive MOSFET RQA130N03 Structure Silicon N-channel MOSFET Di

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Drive MOSFET RQA130N03 Structure Silicon N-channel MOSFET Di

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RQA130N03
Drive MOSFET
RQA130N03
Structure Silicon N-channel MOSFET Dimensions (Unit
PSOP8S
Features on-resistance. Built-in Protection Diode. Small Surface Mount Package (PSOP8S).
Application Switching Packaging specifications
Package Type RQA130N03
Equivalent circuit
Taping 2500
Code Basic ordering unit (pieces)
Protection Diode. Body Diode.
Source Source Source Gate Drain Drain Drain Drain
Absolute maximum ratings 25°C)
Parameter Drain-source voltage Gate-source voltage Continuous Drain current Source current (Body diode) Pulsed Continuous Pulsed Symbol VDSS VGSS
protection diode included between gate source terminals protect diode against static electricity when product use.Use protection circuit when fixed voltage exceeded.
Limits +150
Unit
Total power dissipation Channel temperature Range storage temperature
Pw10µs, Duty cycle1% When mounted 40mm board. Steady state
Tstg
Thermal resistance
Parameter Channel ambient
When mounted 40mm board. Steady state
Symbol (ch-a)12
Limits 44.6
Unit
RQA130N03
Electrical characteristics 25°C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Symbol
IGSS (BR)DSS IDSS (th) (on) Ciss Coss Crss td(on) td(off)
Min.
Typ.
12.2 13.2 1230 12.6
Max.
Unit
Test Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=13A, VGS=10V ID=6.5A, VGS=4.5V ID=6.5A, VGS=4.0V ID=6.5A, VDS=10V VDS=15V VGS=0V f=1MHz ID=6.5A, VGS=10.0V RL=2.3 RG=10 VGS=5V ID=13A
11.7 17.1 18.5
Body diode characteristics (Source-Drain) 25°C)
Parameter Forward voltage
Pulsed
Symbol
Min.
Typ.
Max.
Unit
Test Conditions Is=13A, VGS=0V
RQA130N03
Electrical characteristic curves
DRAIN CURRENT ID[A] DRAIN-SOURCE VOLTAGE VDS[V] VGS=3.0V VGS=2.5V DRAIN CURRENT VGS=10V VGS=5.0V VGS=4.5V VGS=4.0V VGS=3.5V VGS(th)ARIANCE(V) 0.01 0.001 GATE-SOURCE VOLTAGE Ta=125 VDS=10V Pulsed -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 VDS=10V Pulsed
JUNCTION TEMPERATUREj
Fig.1 Output Characteristics
Fig.2 Typical Transfer Characteristics
Fig.3 ThresholdVoltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on)
ON-STATE RESISTANCE:R (on) (Normaralized)
GATE-SOURCE VOLTAGE
ID=13A Ta=25 Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on)
Ta=25 Pulsed VGS=4V VGS=4.5V VGS=10V
VGS=10V Pulsed
DRAIN CURRENT
JUNCTION TEMPERATURE:Tj
Fig.4 Static Drain-Source On-State Resistance Drain Current
Fig.5 On-State ResistanceRDS(on)(Normaralized)
Fig.6 Static Drain-Source On-State Resistance Gate-Source Voltage
SOURCE CURRENT
Ta=125
CAPACITANCE [pF]
VGS=0V Pulsed
GATE-SOURCE VOLTAGE
TOTAL GATE CHARGE [nC] Ta=25 VDD=15V ID=13A RG=10 Pulsed
10000
Ciss
1000
Coss
Crss
0.01 SOURCE-DRAIN VOLTAGE
0.01 DRAIN-SOURCE VOLTAGE
Fig.7 Source Current Source-Drain Voltage
Fig.8 Dynamic Input Characteristics
Fig.9 Typical Capacitance Drain-Source Voltage
RQA130N03
DRAIN CURRENT
NORMARIZED TRANSIENT THERMAL RESISTANCE
0.01 0.001
operation 10ms Operation this area limited RDS(ON) Single Pulse MOUNTEDONCuBOARD
0.01 Single Pulse 0.001 0.001 0.01
0.01
Duty cycle= 0.05 0.02
Single Pulse Rthch-at Rthch-a 44.6 <Mounted CUPPER board>
1000
DRAINSOURCE VOLTAGE
Fig.10 MaximumSafeOperatingArea
PULSE WIDTH Pw(s)
Fig.11 Normarized Transient Tremal Resistance Pulse Width
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction which would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. priority supply products with utmost quality reliability. However, there always chance failure unexpected factors. Therefore, please take into account derating characteristics allow sufficient safety features, such extra margin, anti-flammability, fail-safe measures when designing order prevent possible accidents that result bodily harm fire caused component failure. ROHM cannot held responsible damages arising from products under conditions range specifications non-compliance with NOTES specified this catalog.
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Appendix1-Rev2.0

Drive MOSFET RQA130N03 Structure Silicon N-channel MOSFET Di

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