These logic level N-Channel enhancement mode power field effect transi

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NDP6051L NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor
These logic level N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage applications such automotive, DC/DC converters, motor controls, other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
Features
RDS(ON) 0.023 VGS= RDS(ON) 0.018 VGS= drive requirements allowing operation directly from logic drivers. VGS(TH) 2.0V. Rugged internal source-drain diode eliminate need external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design extremely RDS(ON). TO-220 TO-263 (D2PAK) package both through hole surface mount applications.
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage
25°C unless otherwise noted
NDP6051L 0.67
NDB6051L
Units
Drain-Gate Voltage (RGS Gate-Source Voltage Continuous Nonrepetitive Drain Current Continuous Pulsed
Maximum Power Dissipation 25°C Derate above 25°C
W/°C
TJ,TSTG
Operating Storage Temperature Range
NDP6051L Rev.A
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units DRAIN-SOURCE AVALANCHE RATINGS (Note BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 125°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VGS, 125°C Static Drain-Source On-Resistance 125°C ID(on) On-State Drain Current Forward Transconductance 0.65 0.98 0.021 0.03 0.014
CHARACTERISTICS (Note Gate Threshold Voltage 0.023 0.035 0.018
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tD(off)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1490
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS= RGEN
NDP6051L Rev.A
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage (Note 125°C Reverse Recovery Time Reverse Recovery Current dIF/dt A/µs 0.83
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 62.5 °C/W °C/W
Note: Pulse Test: Pulse Width Duty Cycle 2.0%.
NDP6051L Rev.A
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
DRAIN-SOURCE ON-RESISTANCE
DS(on), NORMALIZED
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
DRAIN-SOURCE ON-RESISTANCE
DS(ON) NORMALIZED
DS(on), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
=24A
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
GATE-SOURCE THRESHOLD VOLTAGE
-55°C
25°C 125°C
NORMALIZED
250µA
DRAIN CURRENT
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDP6051L Rev.A
Typical Electrical Characteristics (continued)
1.15
DRAIN-SOURCE BREAKDOWN VOLTAGE
250µA
REVERSE DRAIN CURRENT
125°C 25°C
NORMALIZED
1.05
-55°C
0.01
0.95
0.001
0.0001
JUNCTION TEMPERATURE (°C)
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
4000 2500 GATE-SOURCE VOLTAGE
1500 CAPACITANCE (pF) 1000
Ciss
Coss Crss
GATE CHARGE (nC) DRAIN SOURCE VOLTAGE
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
d(off)
VOUT
INVERTED
I10%
PULSE WIDTH
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDP6051L Rev.A
Typical Electrical Characteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
DRAIN CURRENT
-55°C 25°C
125°C
SINGLE PULSE
1.5°C 25°C
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
Figure Transconductance Variation with Drain Current Temperature.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
r(t) 1.15 °C/W
0.05 0.03 0.02 0.01 0.01
0.05 0.02 0.01 Single Pulse
P(pk)
Duty Cycle,
0.05
,TIME (ms)
1000
Figure Transient Thermal Response Curve.
NDP6051L Rev.A

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