These P-Channel logic level enhancement mode power field effect transi

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NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor
These P-Channel logic level enhancement mode power field effect transistors produced using Nationals proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance. These devices particularly suited voltage applications such notebook computer power management, portable electronics, other battery powered circuits where fast high-side switching, in-line power loss needed very small outline surface mount package.
Features
-0.9 RDS(ON) -4.5 RDS(ON) Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design superior thermal electrical capabilities. High density cell design extremely RDS(ON). Exceptional on-resistance maximum current capability.
Absolute Maximum Ratings
Symbol VDSS VGSS TJ,TSTG Parameter Drain-Source Voltage
25°C unless otherwise noted
NDS352AP
(Note
Units
Gate-Source Voltage Continuous Maximum Drain Current Continuous Pulsed Maximum Power Dissipation
(Note (Note
±0.9 0.46
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDS352AP Rev.C
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current -250 =125°C IGSSF IGSSR Gate Body Leakage, Forward Gate Body Leakage, Reverse -100
CHARACTERISTICS (Note VGS(th) RDS(ON) Gate Threshold Voltage VGS, -250 =125°C Static Drain-Source On-Resistance -4.5 -0.9 =125°C ID(ON) On-State Drain Current -4.5 -0.9 -0.8 -0.5 -1.7 -1.4 0.45 0.65 0.25 -2.5 -2.2
Ciss Coss Crss td(on) td(off)
Forward Transconductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -0.9 -4.5 -4.5 RGEN
NDS352AP Rev.C
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined design while determined user's board design. solder mounting surface drain pins. guaranteed
Maximum Continuous Source Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -0.42 (Note -0.8
-0.42 -1.2
JA(t)
CA(t)
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 250oC/W when mounted 0.02 copper.
270oC/W when mounted 0.001 copper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDS352AP Rev.C
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT DRAIN-SOURCE ON-RESISTANCE
-10V
-7.0
-6.0 -5.5
DS(on), NORMALIZED
-3.5
-5.0 -4.5 -4.0
-4.0 -4.5 -5.0 -5.5 -6.0 -7.0
-3.5
-3.0
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
-0.9A DS(on), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
-4.5V
125°C 25°C
DS(ON), NORMALIZED
-55°C
-4.5V
DRAIN CURRENT
JUNCTION TEMPERATURE (°C)
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
-10V
DRAIN CURRENT -3.2
-55°C
GATE-SOURCE THRESHOLD VOLTAGE
-2.4
-1.6
-0.8
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDS352AP Rev.C
Typical Electrical Characteristics (continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.08 1.06 1.04 1.02 0.98 0.96 0.94
250µA
REVERSE DRAIN CURRENT
125°C
NORMALIZED
25°C -55°C
0.01
0.001
0.0001
JUNCTION TEMPERATURE (°C)
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
GATE-SOURCE VOLTAGE
-0.9A
Ciss
CAPACITANCE (pF)
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
d(off)
VOUT
I10%
PULSE WIDTH
INVERTED
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDS352Ap Rev.C
Typical Electrical Characteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
DRAIN CURRENT
-55°C
25°C 125°C
0.05
-4.5V SINGLE PULSE Note 25°C
0.01
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
Figure Transconductance Variation with Drain Current Temperature
Figure Maximum Safe Operating Area.
STEADY-STATE POWER DISSIPATION
STEADY-STATE DRAIN CURRENT
4.5"x5" FR-4 Board Still -4.5V
4.5"x5" FR-4 Board Still
COPPER MOUNTING AREA (in2
COPPER MOUNTING AREA
Figue SuperSOT_ Maximum Steady-State Power Dissipation versus Copper Mounting Area.
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.05 0.02 0.01 0.005 0.002 0.001 0.0001
0.05 0.02 0.01 Single Pulse
r(t) Note
P(pk)
Duty Cycle,
0.001
0.01
TIME (sec)
Figure Transient Thermal Response Curve.
Note Characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDS352Ap Rev.C

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