SuperSOTTM-8 P-Channel enhancement mode power field effect transistors

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SuperSOTTM-8 P-Channel enhancement mode power field effect transistors

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NDH854P P-Channel Enhancement Mode Field Effect Transistor
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such notebook computer power management other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
October 1996 PRELIMINARY
Features
-5.1 RDS(ON) 0.035 RDS(ON) 0.052 -4.5V. Proprietary SuperSOTTM-8 package design using copper lead frame superior thermal electrical capabilities. High density cell design extremely RDS(ON). Exceptional on-resistance maximum current capability.
Absolute Maximum Ratings
Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
25°C unless otherwise noted
NDH854P
(Note
Units
-5.1
(Note (Note (Note
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDH854P Rev.B
Electrical Characteristics
Symbol Parameter CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON)
25°C unless otherwise noted)
Conditions
Units
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
-250 -24V,
-100
Gate Body Leakage, Forward Gate Body Leakage, Reverse
20V, VDS= VGS, -250
CHARACTERISTICS (Note Gate Threshold Voltage -0.8 Static Drain-Source On-Resistance -5.1A -4.5 -4.7 ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -5.1 VGEN RGEN -4.5 -5.1 DYNAMIC CHARACTERISTICS 1220
-1.4 -1.1
-2.4
0.026 0.035 0.038 0.072 0.044 0.052
SWITCHING CHARACTERISTICS (Note
NDH854P Rev.B
Electrical Characteristics
Symbol
Notes:
25°C unless otherwise noted)
Parameter
Conditions
-1.5
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -1.5
(Note
-0.74
-1.2
junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
+RCA
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted copper. 125oC/W when mounted 0.026 copper. 135oC/W when mounted 0.005 copper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH854P Rev.B
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT DRAIN-SOURCE ON-RESISTANCE
-10V -6.0
DS(on) NORMALIZED
-5.0 -4.5 -4.0 -3.5
-3.5
-4.0 -4.5 -5.0
-5.5
-3.0
-6.0 -7.0
-2.5
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
DRAIN-SOURCE ON-RESISTANCE
-5.1A
DS(on) NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-10V
-10V
125°C
DS(ON) NORMALIZED
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
GATE-SOURCE THRESHOLD VOLTAGE
DRAIN CURRENT
=-55°C 25°C 125°C
GS(th) NORMALIZED
-250µA
-1.5
-2.5 -3.5 GATE SOURCE VOLTAGE
-4.5
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH854P Rev.B
Typical Electrical Characteristics
1.08 REVERSE DRAIN CURRENT
NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE
-250µA
1.06 1.04 1.02 0.98 0.96 0.94
125°C 25°C -55°C
0.01
0.001
JUNCTION TEMPERATURE (°C)
0.0001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
GATE-SOURCE VOLTAGE
4000 3000 2000 CAPACITANCE (pF)
-5.1A
-10V -15V
Ciss
1000
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
-VDD
toff
d(on)
td(off)
VOUT
I10%
PULSE WIDTH
INVERTED
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH854P Rev.B
Typical Thermal Characteristics
STEADY-STATE POWER DISSIPATION
TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature.
Figure SuperSOTTM-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
DRAIN CURRENT
STEADY-STATE DRAIN CURRENT
-10V SINGLE PULSE Note 25°C
4.5"x5" FR-4 Board Still -10V
0.05
COPPER MOUNTING AREA
0.01
DRAIN-SOURCE VOLTAGE
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE 0.05 0.03 0.02 0.01 0.0001
0.02 0.01 Single Pulse 0.05
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
Duty Cycle, 0.01 TIME (sec)
0.001
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH854P Rev.B
NDH854P Rev.B
NDH854P Rev.B

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors

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