SuperSOTTM-8 P-Channel enhancement mode power field effect transistors
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NDH834P P-Channel Enhancement Mode Field Effect Transistor
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage applications such notebook computer power management other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
September 1996 PRELIMINARY
Features
-5.6 RDS(ON) 0.035 -4.5 RDS(ON) 0.045 -2.7V. High density cell design extremely RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power current handling capability.
Absolute Maximum Ratings
Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
25°C unless otherwise noted
NDH834P
(Note
Units
-5.6
(Note (Note (Note
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDH834P Rev.B
Electrical Characteristics
Symbol Parameter CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON)
25°C unless otherwise noted)
Conditions
Units
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
-250
-100
Gate Body Leakage, Forward Gate Body Leakage, Reverse
VDS= VGS, -250
CHARACTERISTICS (Note Gate Threshold Voltage -0.4 -0.3 Static Drain-Source On-Resistance -4.5 -5.6 -2.7 -5.2 ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -5.6 -4.5 VGEN -4.5 RGEN -4.5 -2.7 -5.6 DYNAMIC CHARACTERISTICS 1820
-0.62 -0.4
-0.8
0.029 0.035 0.039 0.063 0.038 0.045
SWITCHING CHARACTERISTICS (Note
NDH834P Rev.B
Electrical Characteristics
Symbol
Notes:
25°C unless otherwise noted)
Parameter
Conditions
-1.5
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -1.5
(Note
-0.7
-1.2
junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
+RCA
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted copper. 125oC/W when mounted 0.026 copper. 135oC/W when mounted 0.005 copper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH834P Rev.B
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-4.5V -3.5 -3.0
-2.7 -2.5 -2.0
-2.0
-2.5
-2.7 -3.0 -3.5 -4.5
-1.5
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
DS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-5.6A
-4.5V
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-4.5V
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
GATE-SOURCE THRESHOLD VOLTAGE
DRAIN CURRENT
=-55°C 25°C
GS(th) NORMALIZED
-250µA
125°C
-0.5
-1.5 GATE SOURCE VOLTAGE
-2.5
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH834P Rev.B
Typical Electrical Characteristics
1.08 1.06 1.04 1.02 0.98 0.96 0.94 0.92 JUNCTION TEMPERATURE (°C)
NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE
-250µA
REVERSE DRAIN CURRENT
125°C 25°C
-55°C
0.01
0.001
0.0001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
-VGS GATE-SOURCE VOLTAGE
5000 3000 CAPACITANCE (pF) 2000
-5.6A
Ciss
-10V
-15V
1000
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
-VDD
toff
d(on)
td(off)
VOUT
I10%
PULSE WIDTH
INVERTED
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH834P Rev.B
Typical Thermal Characteristics
STEADY-STATE POWER DISSIPATION
TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature.
Figure SOT-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
STEADY-STATE DRAIN CURRENT
DRAIN CURRENT
4.5"x5" FR-4 Board Still -4.5V
0.05
-4.5V SINGLE PULSE Note 25°C
COPPER MOUNTING AREA
0.01
DRAIN-SOURCE VOLTAGE
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE 0.05 0.03 0.02 0.01 0.0001
0.02 0.01 Single Pulse 0.05
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
Duty Cycle, 0.01 TIME (sec)
0.001
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH834P Rev.B
NDH834P Rev.B
NDH834P Rev.B
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