These N-Channel enhancement mode power field effect transistors produc

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

These N-Channel enhancement mode power field effect transistors produc

Datasheet Thumbnail

Top Searches for this datasheet

NDH853N N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such battery powered circuits portable electronics where fast switching, in-line power loss, resistance transients needed.
August 1996 PRELIMINARY
Features
7.6A, 30V. RDS(ON) 0.018 RDS(ON) 0.025 4.5V. High density cell design extremely RDS(ON). Proprietary SuperSOTTM-8 small outline surface mount package with high power current handling capability.
Absolute Maximum Ratings 25°C unless otherwise note
Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
(Note (Note (Note (Note
NDH853N
Units
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDH853N Rev.
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 55°C Gate Body Leakage, Forward Gate Body Leakage, Reverse
(Note
-100
VDS= VGS, 125°C 125°C 0.014 0.02 0.021 1140
CHARACTERISTICS
Gate Threshold Voltage
0.018 0.032 0.025
Static Drain-Source On-Resistance
ID(on) Ciss Coss Crss tD(on) tD(off)
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGEN RGEN 12.7
NDH853N Rev.
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Parameter
Conditions
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
0.72
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted cpper. 125oC/W when mounted 0.026 copper. 135oC/W when mounted 0.005 copper.
Scale letter size paper
Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH853N Rev.
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
=10V
3.5V
DRAIN-SOURCE VOLTAGE DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE
DS(ON) NORMALIZED
7.6A
DS(on) NORMALIZED
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
DRAIN CURRENT
125°C 25°C
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
-55°C
250µA
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH853N Rev.
Typical Electrical Characteristics (continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.08 1.06 1.04 1.02 0.98 0.96 0.94 JUNCTION TEMPERATURE (°C) REVERSE DRAIN CURRENT
250µA
NORMALIZED
125°C 25°C -55°C
0.01
0.001
0.0001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
3000 2000 GATE-SOURCE VOLTAGE
7.6A
CAPACITANCE (pF) 1000
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
toff
td(off)
VOUT
INVERTED
VI10%
PULSE WIDTH
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH853N Rev.
Typical Electrical Thermal Characteristics (continued)
STEADY-STATE POWER DISSIPATION TRANSCONDUCTANCE (SIEMENS)
=10V
-55°C 25°C
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature.
Figure SOT-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
DRAIN CURRENT 0.03
STEADY-STATE DRAIN CURRENT
4.5"x5" FR-4 Board Still
SINGLE PULSE =See Note1c 25°C
COPPER MOUNTING AREA (in2
0.01
DRAIN-SOURCE VOLTAGE
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
Figure Maximum Safe Operating Area
0.05
0.05 0.02
r(t) Note
P(pk)
0.03 0.02 0.01 0.0001
0.01 Single Pulse
Duty Cycle,
0.01 TIME (sec)
0.001
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH853N Rev.

These N-Channel enhancement mode power field effect transistors produc

Top Searches for this datasheet

Other recent searches