These P-Channel logic level enhancement mode power field effect transi

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NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
These P-Channel logic level enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance. These devices particularly suited voltage applications such notebook computer power management, portable electronics, other battery powered circuits where fast high-side switching, in-line power loss needed very small outline surface mount package.
Features
RDS(ON) 0.41 VGS= -2.7 RDS(ON) -4.5 Very level gate drive requirements allowing direct operation circuits. VGS(th) 1.0V. Proprietary package design using copper lead frame superior thermal electrical capabilities. High density cell design extremely RDS(ON). Exceptional on-resistance maximum current capability. Compact industry standard SOT-23 surface package. Mount
Asolute Maximum Ratings
Symbol VDSS VGSS TJ,TSTG Parameter Drain-Source Voltage
25°C unless otherwise noted
NDS332P
(Note
Units
Gate-Source Voltage Continuous Drain Current Continuous Pulsed Maximum Power Dissipation
(Note (Note
0.46
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDS332P Rev.
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current -250 55°C IGSS Gate Body Leakage Current VDS= -100
CHARACTERISTICS (Note VGS(th) Gate Threshold Voltage VGS, -250 =125°C RDS(ON) Static Drain-Source On-Resistance -2.7 =125°C -4.5 -1.1 ID(ON) On-State Drain Current -2.7 -4.5 Ciss Coss Crss tD(on) tD(off) -1.5 -2.5 -0.4 -0.3 -0.6 -0.45 0.35 0.26 -0.8 0.41 0.74
Forward Transconductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -4.5 -4.5 RGEN
NDS332P Rev.
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Source Current Drain-Source Diode Forward Voltage -0.42 (Note -0.75 -0.42 -1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
JA(t)
CA(t)
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment:
when mounted 0.02 copper. 270oC/W when mounted 0.001 copper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDS332P Rev.
Typical Electrical Characteristics
-2.5 DRAIN-SOURCE CURRENT
-2.0
RDS(ON) NORMALIZED
-3.5 -3.0
DRAIN-SOURCE ON-RESISTANCE
-4.5V
-2.5 -2.7
=-2.0V
-1.5
-2.5
-2.7 -3.0 -3.5 -4.5
-1.5
-0.5
-0.5
-1.5 -2.5 DRAIN-SOURCE VOLTAGE
-0.5
-1.5 DRAIN CURRENT
-2.5
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE
DS(ON) NORMALIZED
-2.7
DS(on), NORMALIZED
-2.7
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
-0.5
-1.5 DRAIN CURRENT
-2.5
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
-1.2
25°C -55°C 125°C
NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
-1.5
1.15
-250µA
DRAIN CURRENT
1.05 0.95 0.85
-0.9
-0.6
-0.3
-0.5
-0.75
-1.25
-1.5
-1.75
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDS332P Rev.D
Typical Electrical Characteristics (continued)
1.12
DRAIN-SOURCE BREAKDOWN VOLTAGE
-250µA
1.08
REVERSE DRAIN CURRENT
NORMALIZED
0.05
1.04
125°C
0.01
25°C -55°C
0.96
0.001
0.92
JUNCTION TEMPERATURE (°C)
0.0001 BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
CAPACITANCE (pF)
GATE-SOURCE VOLTAGE
-10V -15V
Ciss Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
d(off)
VOUT
PULSE WIDTH
INVERTED
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDS332PRev.
Typical Electrical Characteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
-55°C
DRAIN CURRENT
25°C 125°C
0.03
-2.7V SINGLE PULSE Note 25°C
-0.5
-1.5 DRAIN CURRENT
-2.5
0.01
-VDS DRAIN-SOURCE VOLTAGE
Figure Transconductance Variation with Drain Current Temperature.
Figure Maximum Safe Operating Area.
STEADY-STATE POWER DISSIPATION
STEADY-STATE DRAIN CURRENT
4.5"x5" FR-4 Board Still
4.5"x5" FR-4 Board Still -2.7V
COPPER MOUNTING AREA
COPPER MOUNTING AREA
Figue SuperSOT_ Maximum Steady-State Power Dissipation versus Copper Mounting Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
Figure Maximum Steady-State Drain Current versus Copper Mounting Pad. Area
0.05 0.02 0.01 0.005 0.002 0.001 0.0001
0.05 0.02 0.01 Single Pulse
r(t) Note
P(pk)
Duty Cycle,
0.001
0.01
TIME (sec)
Figure Transient Thermal Response Curve.
Note Characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDS332PRev.

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