IRLR/U120N HEXFET® Power MOSFET Surface Mount (IRLR120N) Str

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

IRLR/U120N HEXFET® Power MOSFET Surface Mount (IRLR120N) Str

Datasheet Thumbnail

Top Searches for this datasheet

91541B
IRLR/U120N
HEXFET® Power MOSFET
Surface Mount (IRLR120N) Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated
VDSS 100V
RDS(on) 0.185
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve lowest possible on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient device wide variety applications. D-PAK designed surface mounting using vapor phase, infrared, wave soldering techniques. straight lead version (IRFU series) throughhole mounting applications. Power dissipation levels watts possible typical surface mount applications.
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
0.32 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient
Typ.
Max.
Units
°C/W
www.irf.com
5/11/98
IRLR/U120N
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min.
Typ. 0.12
Max. Units Conditions 250µA V/°C Reference 25°C, 0.185 10V, 6.0A 0.225 5.0V, 6.0A 0.265 4.0V, 5.0A VGS, 250µA 25V, 6.0A 100V, 80V, 150°C -100 -16V 6.0A 5.0V, Fig. 6.0A 5.0V 8.2, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 6.0A, 25°C, =6.0A di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. fig. 25V, starting 25°C, 4.7mH 6.0A. (See Figure 175°C
Pulse width 300µs; duty cycle This applied I-PAK, D-PAK measured between lead
center contact
6.0A, di/dt 340A/µs, V(BR)DSS, Uses IRL520N data test conditions.
When mounted square (FR-4 G-10 Material recommended footprint soldering techniques refer application note #AN-994
www.irf.com
IRLR/U120N
rain-to-S ource urrent
rain-to-S ource urrent
8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
2.5V
2.5V
25°C
175°C
rain-to-S ource oltage
rain-to-S ource oltage
Typical Output Characteristics
Typical Output Characteristics
rain-to-S ource esistance alized)
-to-S urren
Junction perature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
IRLR/U120N
ate-to-S ource oltage
6.0A
apacitanc
rain-to-S ource oltage
Total harge
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
everse rain urrent
(on)
175°C
rain urrent
100µ
25°C
25°C 175°C ingle ulse
1000
ource-to-D rain oltage
rain-to-S ource oltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRLR/U120N
rain urrent
D.U.T.
-VDD
5.0V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
perature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRLR/U120N
ingle ulse valanc nergy
2.4A 4.2A
12a. Unclamped Inductive Test Circuit
tarting Junc tion perature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
www.irf.com
IRLR/U120N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
www.irf.com
IRLR/U120N Package Outline
TO-252AA Outline Dimensions shown millimeters (inches)
6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 0.51 (.020) 10.42 (.410) 9.40 (.370) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086)
1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)
GATE SOURCE
-B1.52 (.060) 1.15 (.045) 1.14 (.045) 0.76 (.030) 2.28 (.090) 4.57 (.180) 0.89 (.035) 0.64 (.025) 0.25 (.010)
0.58 (.023) 0.46 (.018)
14.5M 1982. LLIN TLIN -252A +0.16 (.006).
Part Marking Information
TO-252AA (D-PARK)
CODE 9U1P
PART NUMBER
CODE
PART NUMBER
www.irf.com
IRLR/U120N Package Outline
TO-251AA Outline Dimensions shown millimeters (inches)
6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 6.45 (.245) 5.68 (.224) 1.52 (.060) 1.15 (.045) -B2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 14.5M 1982. LLIN -252A +0.16 (.006). 1.14 (.045) 0.76 (.030) 6.22 (.245) 5.97 (.235) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) GATE SOURCE
0.89 (.035) 0.64 (.025)
1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)
2.28 (.090)
0.25 (.010)
Part Marking Information
TO-251AA (I-PARK)
PART NUMBER
ASSEMBLY CODE
PART NUMBER
www.irf.com
IRLR/U120N Tape Reel Information
TO-252AA
NOTES
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario 3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 16907 Tel: 8371 Data specifications subject change without notice. 5/98
www.irf.com
Note: most current drawings please refer website http://www.irf.com/package/

IRLR/U120N HEXFET® Power MOSFET Surface Mount (IRLR120N) Str

Top Searches for this datasheet

Other recent searches