HEXFET® Power MOSFET IRLML2803 VDSS Generation Technolo

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HEXFET® Power MOSFET IRLML2803 VDSS Generation Technolo

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91258E
HEXFET® Power MOSFET
IRLML2803
VDSS
Generation Technology Ultra On-Resistance N-Channel MOSFET SOT-23 Footprint Profile (<1.1mm) Available Tape Reel Fast Switching
RDS(on) 0.25
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. customized leadframe been incorporated into standard SOT-23 package produce HEXFET Power MOSFET with industry's smallest footprint. This package, dubbed Micro3, ideal applications where printed circuit board space premium. profile (<1.1mm) Micro3 allows easily into extremely thin application environments such portable electronics PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C dv/dt ,TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak diode Recovery dv/dt Junction Storage Temperature Range
Max.
0.93
Units
mW/°C V/ns
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
Units
°C/W
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04/10/07
IRLML2803
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS d(on) d(off) Ciss Coss Crss
Min. 0.87
Typ. 0.029 0.48
Max. Units Conditions 250µA V/°C Reference 25°C, 0.25 10V, 0.91A 0.40 4.5V, 0.46A VGS, 250µA 10V, 0.46A 24V, 24V, 125°C -100 -20V 0.91A 0.72 10V, Fig. 0.91A Fig. 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 0.54
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 0.91A, 25°C, 0.91A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle Surface mounted FR-4 board, 5sec. Limited TJmax, starting 25°C, 9.4mH, 0.9A.
0.91A, di/dt 120A/µs, V(BR)DSS,
150°C
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IRLML2803
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
Drain-to-Source Current
Drain-to-Source Current
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
3.0V
3.0V 20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 150°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Drain-to-Source Current
25°C 150°C
DS(on) Drain-to-Source Resistance (Normalized)
0.91A
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRLML2803
Capacitance (pF)
Ciss
Coss
Gate-to-Source Voltage
1MHz SHORTED
0.91A
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Reverse Drain Current
OPERATION THIS AREA LIMITED DS(on)
150°C
Drain Current
10µs
25°C
100µs
25°C 150°C Single Pulse
10ms
Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLML2803
D.U.T.
Charge
Pulse Width Duty Factor
Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
10a. Switching Time Test Circuit
.2µF .3µF
D.U.T.
td(on)
d(off)
Current Sampling Resistors
Gate Charge Test Circuit
1000
10b. Switching Time Waveforms
Thermal Response thJA
0.50 0.20 0.10
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.0001 0.001 0.01
0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLML2803
EAS, Single Pulse Avalanche Energy (mJ)
DRIVER
0.57A 0.75A BOTTOM 0.90A
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature (°C)
12b. Unclamped Inductive Waveforms
12c. Maximum Avalanche Energy Drain Current
D.U.T
Driver Gate Drive
P.W.
Period
P.W. Period VGS=10V
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices Peak Diode Recovery dv/dt Test Circuit N-Channel HEXFET® Power MOSFETs
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IRLML2803
Package Outline
Dimensions shown milimeters (inches)
9DH@ITDPIT HDGGDH@U@ST
DI8C@T
b"'d !&#!
b"&$d
b&$d
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IPU@T
IRLML2803
Micro3 (SOT-23/TO-236AB) Part Marking Information
`@6S XPSF X@@F
8P9@
XPSF X@@F
`@6S
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IRLML2803
Tape Reel Information
SOT-23 Dimensions shown millimeters (inches)
2.05 .080 1.95 .077 .161 .154 .062 .060 1.85 .072 1.65 .065 1.32 .051 1.12 .045
3.55 .139 3.45 .136
.326 .312
FEED DIRECTION
.161 .154
.043 .036
0.35 .013 0.25 .010
178.00 7.008 MAX.
9.90 .390 8.40 .331 NOTES: CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice.
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WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 04/2007

HEXFET® Power MOSFET IRLML2803 VDSS Generation Technolo

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