IRL520N HEXFET® Power MOSFET VDSS 100V Logic-Level Gate

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IRL520N HEXFET® Power MOSFET VDSS 100V Logic-Level Gate

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91494A
IRL520N
HEXFET®
Power MOSFET VDSS 100V
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
RDS(on) 0.18
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. TO-220 package universally preferred commercial-industrial applications power dissipation levels approximately watts. thermal resistance package cost TO-220 contribute wide acceptance throughout industry.
TO-220AB
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 srew
Max.
0.32 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
Units
°C/W
5/13/98
IRL520N
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min.
Typ. 0.11
Max. Units Conditions 250µA V/°C Reference 25°C, 0.18 10V, 6.0A 0.22 5.0V, 6.0A 0.26 4.0V, 5.0A 250µA 25V, 6.0A 100V, 80V, 150°C -100 -16V 6.0A 5.0V, Fig. 6.0A 5.0V 8.2, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 6.0A, 25°C, =6.0A di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. fig.
6.0A, di/dt 340A/µs, V(BR)DSS,
175°C
Starting 25°C, 4.7mH
6.0A. (See Figure
Pulse width 300µs; duty cycle
IRL520N
8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
rain-to-S ource urrent
Drain-to-Source Current
8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
2.5V
rain-to-S ource oltage
rain-to-S ource oltage
Typical Output Characteristics
Typical Output Characteristics
rain-to-S ource esistance alized)
rain-to-So urce urren
ate-to -Sou Voltage
Junction perature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRL520N
Capacitance (pF)
-to-S oltage
1MHz
rain-to-S ourc oltage
Total harge
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
everse Drain urrent
Drain urrent
100µ
1000
ourc e-to-D rain oltage
rain-to-S ource oltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRL520N
rain rren
D.U.T.
-VDD
5.0V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
perature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL520N
ingle ulse valanche nergy
4.2A
12a. Unclamped Inductive Test Circuit
tarting tion perature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
IRL520N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
IRL520N
Package Outline
TO-220AB Outline Dimensions shown millimeters (inches)
2.87 (.11 2.62 (.10 (.149 (.139 6.47 (.25 6.10 (.24 4.69 4.20 (.05 (.04
5.24 (.60 4.84 (.58
1.15 (.04
GATE
4.09 (.55 3.47 (.53
4.06 (.16 3.55 (.14
0.93 (.03 0.69 (.02
0.55 (.02 0.46 (.01
(.01
2.54 (.10 4.5M
(.11 (.10
Part Marking Information
TO-220AB
THTH AMPLE
TIFR TIFIE 9246 SEMBLY
MBER
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 5/98
Note: most current drawings please refer website http://www.irf.com/package/

IRL520N HEXFET® Power MOSFET VDSS 100V Logic-Level Gate

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