RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Part Number
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PD-91332F
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
Part Number Radiation Level IRHM7260 100K Rads (Si) IRHM3260 300K Rads (Si) IRHM4260 500K Rads (Si) IRHM8260 1000K Rads (Si) RDS(on) 0.070 0.070 0.070 0.070
IRHM7260 JANSR2N7433 200V, N-CHANNEL
REF: MIL-PRF-19500/663 RAD-Hard HEXFET TECHNOLOGY
Part Number 35A* JANSR2N7433 35A* JANSF2N7433 35A* JANSG2N7433 35A* JANSH2N7433
International Rectifier's RAD-Hard HEXFET technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
TO-254AA
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight *Current limited package footnotes refer last page
Pre-Irradiation
Units
W/°C
V/ns
(0.063 in.(1.6mm) from case 10s) (Typical)
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08/09/07
IRHM7260, JANSR2N7433
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.26 0.070 0.077 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 12V, VGS, 1.0mA 15V, VDS= 160V ,VGS 160V, 125°C -20V =12V, =35A 100V 100V, =35A =12V, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from Drain lead (6mm /0.25in from package) Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Drain
Ciss Coss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
5300 1200
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 35A, 25°C, 35A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
*Current limited package
Thermal Resistance
Parameter
RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Units
0.50 0.21
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available International Rectifier Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHM7260, JANSR2N7433
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Diode Forward Voltage
Rads(Si)1
300K-1000K Rads (Si)2
Units
-100 0.070
1.25
-100 0.11
Test Conditions
1.0mA VDS, 1.0mA 160V, 12V,
Part number IRHM7260 (JANSR2N7433) Part numbers IRHM3260 (JANSF2N7433), IRHM4260 (JANSG2N7432) IRHM8260 (JANSH2N7433)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
(MeV/(mg/cm2)) 36.8 Energy (MeV) Range (µm)
VDS(V)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHM7260, JANSR2N7433
Pre-Irradiation
1000
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
1000
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
5.0V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHM7260, JANSR2N7433
10000
8000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
160V 100V
Capacitance (pF)
Ciss
6000
4000
Coss
2000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000 OPERATION THIS AREA LIMITED DS(on)
Reverse Drain Current
Drain-to-Source Current
100µs
25°C 150°C Single Pulse
10ms
,Source-to-Drain Voltage
1000
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHM7260, JANSR2N7433
Pre-Irradiation
LIMITED PACKAGE
Pulse Width Duty Factor
D.U.T.
Drain Current
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01
0.001 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7260, JANSR2N7433
1400
Single Pulse Avalanche Energy (mJ)
1200 1000
BOTTOM
DRIVER
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRHM7260, JANSR2N7433
Pre-Irradiation
Pulse width Duty Cycle Total Dose Irradiation with Bias.
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. Peak 35A, =12V
50V, starting 25°C, L=0.82mH 35A, di/dt 410A/µs,
200V, 150°C
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions TO-254AA
3.78 [.149] 3.53 [.139] 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665]
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
14.48 [.570] 12.95 [.510]
0.84 [.033] MAX.
3.81 [.150]
1.14 [.045] 0.89 [.035] 0.36 [.014]
ASSIGNMENTS DRAIN SOURCE GATE
3.81 [.150]
DIMENSIONING TOLERANCING ASME Y14.5M-1994. DIMENSIONS SHOWN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS JEDEC OUTLINE TO-254AA.
CAUTION BERYLLIA WARNING MIL-PRF-19500 Package containing beryllia shall ground, sandblasted, machined, have other operations performed them which will produce beryllia beryllium dust. Furthermore, beryllium oxide packages shall placed acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 LEOMINSTER Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 08/2007
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