RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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90887G
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Part Number IRHM7054 IRHM3054 IRHM4054 IRHM8054 Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) 1000K Rads (Si) RDS(on) 0.027 0.027 0.027 0.040 35A* 35A* 35A* 35A*
IRHM7054 JANSR2N7394 60V, N-CHANNEL REF: MIL-PRF-19500/603
RAD-Hard HEXFET TECHNOLOGY
Part Number
JANSR2N7394 JANSF2N7394 JANSG2N7394 JANSH2N7394
TO-254AA
International Rectifier's RAD-HardHEXFET® technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight *Current limited package footnotes refer last page
Pre-Irradiation
Units
W/°C
V/ns
(0.063 in.(1.6mm) from case 10s) (Typical)
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05/15/06
IRHM7054, JANSR2N7394
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.053 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 12V, VGS, 1.0mA 15V, VDS= ,VGS=0V 48V, 125°C -20V =12V, =30V, =12V, 2.35
0.027 0.030 -100
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from Drain lead (6mm /0.25in from package) Source lead (6mm /0.25in. from
Package) with Source wires internally bonded from Source Drain
Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4100 2000
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 35A, 25°C, 35A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Current limited package
Thermal Resistance
Parameter
RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Units
0.83 0.21
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available International Rectifier Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHM7054, JANSR2N7394
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254AA) Diode Forward Voltage 500K Rads(Si)1 1000K Rads (Si)2 Units -100 0.027 0.027 1.25 -100 0.04 0.04
Test Conditions
1.0mA VDS, 1.0mA VDS= 48V, 12V, 12V,
Part numbers IRHM7054 (JANSR2N7394), IRHM3054 (JANSF2N7394), IRHM4054 (JANSG2N7394) Part number IRHM8054 (JANSH2N7394)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
(MeV/(mg/cm2)) 36.8 59.9 Energy (MeV)
Range (µm) 32.8
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHM7054, JANSR2N7394
Pre-Irradiation
1000
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
1000
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
5.0V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHM7054, JANSR2N7394
8000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
Capacitance (pF)
6000
Ciss
4000
Coss
2000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
100us
10ms
Single Pulse
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHM7054, JANSR2N7394
Pre-Irradiation
LIMITED PACKAGE
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
Notes: Duty factor Peak thJC
0.01
0.001 0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7054, JANSR2N7394
1200
Single Pulse Avalanche Energy (mJ)
BOTTOM
1000
DRIVER
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRHM7054, JANSR2N7394
Pre-Irradiation
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, 0.9mH Peak 35A, =12V 35A, di/dt 150A/µs, 60V, 150°C
Case Outline Dimensions TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665]
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
3.81 [.150]
1.14 [.045] 0.89 [.035] 0.36 [.014]
3.81 [.150]
127(6
DIMENSIONING TOLERANCING ASME Y14.5M-1994. DIMENSIONS SHOWN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS JEDEC OUTLINE TO-254AA.
ASSIGNMENTS DRAIN SOURCE GATE
CAUTION BERYLLIA WARNING MIL-PRF-19500 Package containing beryllia shall ground, sandblasted, machined, have other operations performed them which will produce beryllia beryllium dust. Furthermore, beryllium oxide packages shall placed acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 LEOMINSTER Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 05/2006
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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