INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F

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97210
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
(ON) Trench IGBT Technology switching losses Maximum Junction temperature short circuit Square RBSOA 100% parts tested rated current (ILM) Positive (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
IRGP4063DPbF
VCES 600V 48A, 100°
5µs, TJ(max) 175°
n-channel
VCE(on) typ. 1.65V
Benefits
High Efficiency wide range applications Suitable wide range switching frequencies (ON) Switching losses Rugged transient Performance increased reliability Excellent Current sharing parallel operation
Gate
TO-247A
Collector
Emitter
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 25°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw (0.063 (1.6mm) from case) (1.1
Max.
+175
Units
Continuous Gate-to-Emitter Voltage
Thermal Resistance
Parameter
(IGBT) (Diode) Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
Typ.
0.24
Max.
0.45 0.92
Units
°C/W
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05/11/06
IRGP4063DPbF
Electrical Characteristics 25°C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
Typ.
0.30 1.65 2.05 1.95 1.45
Max. Units
2.14 1000 2.91 ±100
Conditions
150µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. Breakdown Voltage
Ref.Fig 5,6,7 9,10,11
V/°C (25°C-175°C) 48A, 15V, 25°C 48A, 15V, 150°C 48A, 15V, 175°C VGE, 1.4mA
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
ICES IGES
mV/°C VGE, 1.0mA (25°C 175°C) 50V, 48A, 80µs 600V 600V, 175°C 48A, 175°C ±20V
Switching Characteristics 25°C (unless otherwise specified)
Parameter
Eoff Etotal td(on) td(off) Eoff Etotal td(on) td(off) Cies Coes Cres RBSOA SCSOA Erec Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
Min.
Typ.
1275 1900 1625 1585 3210 3025
Max. Units
1141 1481 2622 400V
Conditions
Ref.Fig
48A, 400V, 200µH, 150nH, 25°Energy losses include tail diode reverse recovery
48A, 400V, 200µH, 150nH,
48A, 400V, VGE=15V RG=10, L=200µH, LS=150nH, 175°C 48A, 400V, 200µH, 150nH 175°
WF1,
Energy losses include tail diode reverse recovery
1.0Mhz 175°C, 192A 480V, =600V +15V
FULL SQUARE
400V, =600V +15V 175°C 400V, 15V, =200µH, 150nH
Notes: (VCES), 20V, 200µH, This only applied TO-247AC package. Pulse width limited max. junction temperature. Refer AN-1086 guidelines measuring V(BR)CES safely.
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IRGP4063DPbF
(°C)
Ptot
(°C)
Fig. Maximum Collector Current Case Temperature
1000
Fig. Power Dissipation Case Temperature
1000
10µsec 100µsec
1msec
25°C 175°C Single Pulse 1000
1000
Fig. Forward 25°C, 175°C; =15V
8.0V
Fig. Reverse Bias 175°C; =15V
8.0V
Fig. Typ. IGBT Output Characteristics -40°C; 80µs
Fig. Typ. IGBT Output Characteristics 25°C; 80µs
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IRGP4063DPbF
8.0V
-40°c 25°C 175°
Fig. Typ. IGBT Output Characteristics 175°C; 80µs
Fig. Typ. Diode Forward Characteristics 80µs
Fig. Typical -40°20
Fig. Typical
25°C 175°
Fig. Typical 175°
Fig. Typ. Transfer Characteristics 50V; 10µs
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IRGP4063DPbF
6000 5000 EOFF 4000
1000
Swiching Time (ns)
Energy (µJ)
tdOFF tdON
3000 2000 1000
Fig. Typ. Energy Loss 175°C; 200µH; 400V,
5000 4500 4000 EOFF
Fig. Typ. Switching Time 175°C; 200µH; 400V,
1000 tdOFF
Swiching Time (ns)
Energy (µJ)
3500 3000 2500 2000 1500 1000
tdON
Fig. Typ. Energy Loss 175°C; 200µH; 400V, 48A;
Fig. Typ. Switching Time 175°C; 200µH; 400V, 48A;
Fig. Typ. Diode 175°
Fig. Typ. Diode 175°
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IRGP4063DPbF
4000 3500
3000
(µC)
1000 (A/µs)
2500 2000 1500 1000
1000
1500
(A/µs)
Fig. Typ. Diode diF/dt 400V; 15V; 48A; 175°900
Fig. Typ. Diode diF/dt 400V; 15V; 175°18
Time (µs)
Energy (µJ)
Current
Fig. Typ. Diode 175°10000 Cies
Fig. Short Circuit Time 400V; 25°16 300V 400V
Capacitance (pF)
1000
Coes Cres
VGE, Gate-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typ. Capacitance VGE= 1MHz
Fig. Typical Gate Charge 48A; 600µH
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IRGP4063DPbF
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE THERMAL RESPONSE
0.01
(°C/W) (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 0.020330
0.001
i/Ri i/Ri
Notes: Duty Factor t1/t2 Peak Zthjc 0.0001 1E-006 1E-005 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01
0.01
(°C/W) (sec) 0.2774 0.000908 0.3896 0.2540 0.003869 0.030195
0.001
SINGLE PULSE THERMAL RESPONSE
i/Ri i/Ri
Notes: Duty Factor t1/t2 Peak Zthjc 0.001 0.01
0.0001 1E-006
1E-005
0.0001
Rectangular Pulse Duration (sec)
Fig. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGP4063DPbF
Fig.C.T.1 Gate Charge Circuit (turn-off)
Fig.C.T.2 RBSOA Circuit
clamp
360V
RIVER
Fig.C.T.3 S.C. Circuit
Fig.C.T.4 Switching Loss Circuit
force
400µH sense
force
0.0075µ
sense force
Fig.C.T.5 Resistive Load Circuit
Fig.C.T.6 BVCES Filter Circuit
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IRGP4063DPbF
test TEST CURRE test
7.00
1.10
-100 -0.40
-100 6.20
EOFF Loss 0.10 0.60
6.40
6.60 Time (µs)
6.80
Time(µs)
Fig. Typ. Turn-off Loss Waveform 175°C using Fig. CT.4
Fig. Typ. Turn-on Loss Waveform 175°C using Fig. CT.4
-0.15 Peak
Peak
-100 10.00
-100 -5.00
-0.05
0.05
0.15
0.25
0.00
5.00
time (µS)
Fig. Typ. Diode Recovery Waveform 175°C using Fig. CT.4
time (µS) Fig. Typ. S.C. Waveform 25°C using Fig. CT.3
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IRGP4063DPbF
TO-247AC Package Outline
Dimensions shown millimeters (inches)
TO-247AC Part Marking Information
@Y6HQG@) DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
,5)3(
TO-247AC package recommended Surface Mount Application. Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 05/06
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Note: most current drawings please refer website http://www.irf.com/package/

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F

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