IRG4RC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
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91571A
IRG4RC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
VCES 600V VCE(on) typ. 2.15V
UltraFast: Optimized medium operating frequencies 8-40 hard switching, >200 resonant mode). Generation IGBT design provides tighter parameter distribution higher efficiency than previous generation IGBT co-packaged with HEXFREDultrafast, ultra-soft-recovery anti-parallel diodes bridge configurations Industry standard TO-252AA package Generation IGBT's offer highest efficiencies available IGBT's optimized specific application conditions HEXFRED diodes optimized performance with IGBT's Minimized recovery characteristics require less/no snubbing Lower losses than MOSFET's conduction Diode losses
@VGE 15V, 5.0A
n-cha
(typ.) 140ns
Benefits
D-PAK TO-252AA
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw.
Max.
+150 (0.063 (1.6mm) from case) (1.1
Units
Thermal Resistance
Parameter
Junction-to-Case IGBT Junction-to-Case Diode Junction-to-Ambient (PCB mount)* Weight
Min.
Typ.
(0.01)
Max.
Units
°C/W (oz)
Details note through last page
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12/30/00
IRG4RC10UD
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS V(BR)CES/TJ Temperature Coeff. Breakdown Voltage 0.54 VCE(on) Collector-to-Emitter Saturation Voltage 2.15 2.61 2.30 Gate Threshold Voltage VGE(th) VGE(th)/TJ Temperature Coeff. Threshold Voltage -8.7 Forward Transconductance Zero Gate Voltage Collector Current ICES Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES Max. Units Conditions 250µA V/°C 1.0mA 5.0A 8.5A Fig. 5.0A, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, 5.0A 600V 1000 600V, 150°C 4.0A Fig. 4.0A, 125°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres (rec)M/dt Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. 0.14 0.12 0.26 0.45 Max. Units Conditions 5.0A 400V Fig. 25°C 5.0A, 480V 15V, Energy losses include "tail" diode reverse recovery. Fig. 0.33 150°C, Fig. 5.0A, 480V 15V, Energy losses include "tail" diode reverse recovery. Measured from package Fig. 1.0MHz 25°C Fig. 125°C 4.0A 25°C Fig. 125°C 200V 25°C Fig. 125°C di/dt 200A/µs A/µs 25°C Fig. 125°C
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IRG4RC10UD
both:
LOAD CURRENT
cle: 125°C 90°C 55°C drive specified ation
rate volta
Frequency (KHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
Collector-to-Emitter Current
Collector-to-Emitter Current
PULSE WIDTH
20µs PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics www.irf.com
Fig. Typical Transfer Characteristics
IRG4RC10UD
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Maximum Collector Current(A)
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com
IRG4RC10UD
Gate-to-Emitter Voltage
1MHz Cies SHORTED Cres Coes
400V 5.0A
Capacitance (pF)
Cies
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
0.30
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V 5.0A
480V
5.0A
0.25
0.20
0.01
Gate Resistance Gate Resistance (Ohm)
Junction Temperature
Fig. Typical Switching Losses Gate Resistance www.irf.com
Fig. Typical Switching Losses Junction Temperature
IRG4RC10UD
Collector-to-Emitter Current
Total Switching Losses (mJ)
480V
SAFE OPERATING AREA
1000
Collector-to-emitter Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
150°C 125°C 25°C
orward oltage Forward Voltage Drop
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current www.irf.com
IRG4RC10UD
8.0A 4.0A
8.0A
4.0A
trr- (nC)
Irr-
1000
(A/µ
1000
(A/µ
Fig. Typical Reverse Recovery dif/dt
25°C
Fig. Typical Recovery Current dif/dt
1000
8.0A
8.0A
(rec) M/dt- /µs)
Qrr- (nC)
4.0A
4.0A
(A/µ
1000
1000
(A/µ
Fig. Typical Stored Charge dif/dt www.irf.com
Fig. Typical di(rec)M/dt dif/dt,
IRG4RC10UD
Same device .U.T. +Vge
430µF
Fig. Test Circuit Measurement
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
Eoff
VceicIc
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
LTAG
ieIc OVERY ENER
idIct
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr,
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IRG4RC10UD
Figure 18e. Macro Waveforms Figure 18a's Test Circuit
1000V 6000µ D.U.T.
480V
480V @25°C
Figure Clamped Inductive Load Test Circuit
Figure Pulsed Collector Current Test Circuit
Package Outline
TO-252AA Outline Dimensions shown millimeters (inches)
(.21 (.20 6.45 (.24 5.68 (.22 (.04 (.02 0.51 (.41 SOURCE
0.58 (.02 0.46 (.01
LEAD ASSIGNMENTS GATE COLLECTOR
2.28 4.57
0.89 0.64
EMITTER COLLECTOR
0.16
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IRG4RC10UD
Notes:
Repetitive rating: VGE=20V; pulse width limited maximum junction temperature (figure VCC=80%(VCES), VGE=20V, L=10µH, (figure Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
Tape Reel Information
TO-252AA
NOTES
NOTES
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 12/00
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Note: most current drawings please refer website http://www.irf.com/package/
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