IRG4RC10U INSULATED GATE BIPOLAR TRANSISTOR UltraFast: Optim
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91572A
IRG4RC10U
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast: Optimized high operating frequencies 8-40 hard switching, >200 resonant mode) Generation IGBT design provides tighter parameter distribution higher efficiency than previous generation Industry standard TO-252AA package
UltraFast Speed IGBT
VCES 600V
VCE(on) typ. 2.15V
@VGE 15V, 5.0A
n-channel
Benefits
Generation IGBT's offer highest efficiency available IGBT's optimized specified application conditions
D-PAK TO-252AA
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C EARV 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec.
Max.
+150 (0.063 (1.6mm) from case
Units
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB mount)* Weight
Typ.
(0.01)
Max.
Units
°C/W (oz)
When mounted square (FR-4 G-10 Material). recommended footprint soldering techniques refer application note #AN-994
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8/30/99
IRG4RC10U
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(ON) VGE(th) VGE(th)/TJ ICES
IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 250µA Emitter-to-Collector Breakdown Voltage 1.0A Temperature Coeff. Breakdown Voltage 0.54 V/°C 1.0mA 2.15 5.0A Collector-to-Emitter Saturation Voltage 2.61 8.5A Fig.2, 2.30 5.0A 150°C Gate Threshold Voltage VGE, 250µA Temperature Coeff. Threshold Voltage -8.7 mV/°C VGE, 250µA Forward Transconductance 100V, 5.0A 600V Zero Gate Voltage Collector Current 10V, 25°C 1000 600V, 150°C Gate-to-Emitter Leakage Current ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 5.0A 400V Fig. 25°C 5.0A, 480V 15V, 0.08 Energy losses include "tail" 0.16 Fig. 0.24 0.36 150°C, 5.0A, 480V 15V, Energy losses include "tail" 0.36 Fig. Measured from package Fig. 1.0MHz
Repetitive rating; 20V, pulse width limited
max. junction temperature. fig.
80%(VCES), 20V, 10µH, 100,
(See fig. 13a)
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited maximum
junction temperature.
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IRG4RC10U
ycle drive cified
Load Current
rate
ave: rate
Frequency (kHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
Collector-to-Emitter Current
Collector-to-Emitter Current
PULSE WIDTH
20µs PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRG4RC10U
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Maximum Collector Current(A)
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4RC10U
Gate-to-Emitter Voltage
1MHz Cies SHORTED Cres Coes
400V 5.0A
Capacitance (pF)
Cies
Coes Cres
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
0.30
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V 0.26 5.0A
100Ohm 480V
0.22
0.18
0.14
0.10
Gate Resistance RGG,,Gate Resistance (Ohm)
0.01
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRG4RC10U
Collector-to-Emitter Current
Total Switching Losses (mJ)
100Ohm 480V
SAFE OPERATING AREA
1000
Collector-to-emitter Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
480V 480V C@25°C
480µF 960V
Driver Note: supply, puls idth inductor incre obta rated
Fig. Clamped Inductive
Load Test Circuit
Fig. Pulsed Collector
Current Test Circuit
river* 1000V
Driver same type D.U.T., 480V
Fig. Switching Loss
Test Circuit
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IRG4RC10U
Fig. Switching Loss
Waveforms
t=5µ
Package Outline
TO-252AA Outline Dimensions shown millimeters (inches)
6.73 6.35 -A5.46 5.21 (.24 (.22 (.245 (.235 1.02 1.64 -B1.5 (.04 (.03 (.09 (.035 (.025 (.01 (.02 (.41 9.40
LEAD ASSIGNMENTS
2.38 2.19
(.045 (.035 0.58 0.46
(.050 (.035
AS-SIG GATE COLLECTOR EMITTER COLLECTOR
(.023 (.018 14.5 -252 +0.16
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IRG4RC10U
Tape Reel Information
TO-252AA
.641 .619
16.3 15.7
ILLIM
NOTES -481
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 12/98
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Note: most current drawings please refer website http://www.irf.com/package/
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