IRG4PH50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
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91573A
IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast: Optimized high operating frequencies hard switching, >200 resonant mode IGBT design provides tighter parameter distribution higher efficiency than previous generations IGBT co-packaged with HEXFREDultrafast, ultra-soft-recovery anti-parallel diodes bridge configurations Industry standard TO-247AC package
UltraFast CoPack IGBT
VCES 1200V
VCE(on) typ. 2.78V
@VGE 15V,
n-cha
Benefits
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized performance with IGBT's Minimized recovery characteristics require less/no snubbing
TO-247AC
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C 25°C 100°C TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 screw.
Max.
1200 (0.063 (1.6mm) from case
Units
Thermal Resistance
Parameter
Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
0.24 (0.21)
Max.
0.64 0.83
Units
°C/W
(oz)
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7/7/2000
IRG4PH50UD
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ ICES IGES
Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown VoltageS 1200 Temperature Coeff. Breakdown Voltage 1.20 V/°C Collector-to-Emitter Saturation Voltage 2.56 2.78 3.20 2.54 Gate Threshold Voltage Temperature Coeff. Threshold Voltage mV/°C Forward Transconductance Zero Gate Voltage Collector Current 6500 Diode Forward Voltage Drop Gate-to-Emitter Leakage Current ±100
Conditions 250µA 1.0mA Fig. 24A, 150°C VGE, 250µA VGE, 250µA 100V, 1200V 1200V, 150°C Fig. 16A, 150°C ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. 2.10 1.50 3.60 6.38 3600 Max. Units Conditions 400V Fig. 25°C 24A, 800V 15V, Energy losses include "tail" diode reverse recovery. Fig. 150°C, Fig. 24A, 800V 15V, Energy losses include "tail" diode reverse recovery. Measured from package Fig. 1.0MHz 25°C Fig. 125°C 25°C Fig. 125°C 200V 25°C Fig. di/dt 200A/µs 1838 125°C A/µs 25°C Fig. 125°C
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IRG4PH50UD
LOAD CURRENT
sink ifie
rate volta
Frequency (KHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
1000
1000
Collector-to-Emitter Current
Collector-to-Emitter Current
20µs PULSE WIDTH
PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRG4PH50UD
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Maximum Collector Current(A)
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PH50UD
7000
Gate-to-Emitter Voltage
6000
1MHz Cies SHORTED Cres Coes
400V
Capacitance (pF)
5000
Cies
4000
3000
2000
1000
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
5.00
Total Switching Losses
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V 4.60
800V
4.20
3.80
3.40
3.00
Gate Resistance (Ohm)
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRG4PH50UD
Collector-to-Emitter Current
Total Switching Losses (mJ)
480V
1000
SAFE OPERATING AREA
1000 10000
Collector-to-emitter Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
1000
Fig. Turn-Off
Instantaneous Forward Current
150°C
125°C 25°C
orward oltage
Fig. Typical Forward Voltage Drop Instantaneous Forward Current
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IRG4PH50UD
200V 125°C 25°C
125°C 25°C
(ns)
1000
1000
Fig. Typical Reverse Recovery dif/dt
1200
Fig. Typical Recovery Current dif/dt
1000
200V 125°C 25°C
200V 125°C 25°C
di(rec)M
8.0A
1000
1000
Fig. Typical Stored Charge dif/dt
Fig. Typical di(rec)M/dt dif/dt
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IRG4PH50UD
Same device .U.T.
430µF
td(off)
d(on) (Eon +Eoff
t=5µs Eoff
Fig. Test Circuit Measurement
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
LTAG
ieIc OVERY ENER
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr,
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IRG4PH50UD
Figure 18e. Macro Waveforms Figure 18a's Test Circuit
1000V 100V
D.U.T.
800V
800V @25°C
Figure Clamped Inductive Load Test Circuit
Figure Pulsed Collector Current Test Circuit
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IRG4PH50UD
Notes:
Repetitive rating: VGE=20V; pulse width limited maximum junction temperature (figure VCC=80%(VCES), VGE=20V, L=10µH, (figure Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
Case Outline TO-247AC
NOTE
LEAD 1234-
COLLECTO COLLECTO
EDEC 47AC -3P)
illim
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Note: most current drawings please refer website http://www.irf.com/package/
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