IRG4PH40K INSULATED GATE BIPOLAR TRANSISTOR High short circu
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91578B
IRG4PH40K
INSULATED GATE BIPOLAR TRANSISTOR
High short circuit rating optimized motor control, =10µs, 720V 125°C, Combines conduction losses with high switching speed Latest generation design provides tighter parameter distribution higher efficiency than previous generations
Short Circuit Rated UltraFast IGBT
VCES 1200V
VCE(on) typ. 2.74V
@VGE 15V,
n-channel
Benefits
Freewheeling Diode recommend HEXFREDultrafast, ultrasoft recovery diodes minimum Noise switching losses Diode IGBT Latest generation IGBT's offer highest power density motor controls possible This part replaces IRGPH40K IRGPH40M devices
TO-247AC
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C EARV 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting torque, 6-32 screw.
Max.
1200 +150 (0.063 (1.6mm) from case)
Units
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
0.24 (0.21)
Max.
0.77
Units
°C/W (oz)
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2/7/2000
IRG4PH40K
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th) VGE(th)/TJ ICES IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 250µA Emitter-to-Collector Breakdown Voltage 1.0A Temperature Coeff. Breakdown Voltage 0.37 V/°C 1.0mA 2.54 2.74 Collector-to-Emitter Saturation Voltage 3.29 Fig.2, 2.53 150°C Gate Threshold Voltage VGE, 250µA Temperature Coeff. Threshold Voltage -3.3 mV/°C VGE, 250µA Forward Transconductance 1200V Zero Gate Voltage Collector Current 10V, 25°C 3000 1200V, 150°C Gate-to-Emitter Leakage Current ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Eoff Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 400V Fig.8 25°C 15A, 960V 15V, 0.73 Energy losses include "tail" 1.66 Fig. 9,10,14 2.39 720V, 125°C 15V, 150°C, 15A, 960V 15V, Energy losses include "tail" 4.93 Fig. 10,11,14 0.37 25°C, 15V, 0.89 10A, 960V 1.26 Energy losses include "tail" Measured from package 1600 Fig. 1.0MHz
Details note through last page
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IRG4PH40K
125° 90°C drive spec ified
Load Current
wave
Frequency (kHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
Collector-to-Emitter Current
Collector-to-Emitter Current
PULSE WIDTH
20µs PULSE WIDTH
Collector-to-Emitter Voltage
VGE, Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRG4PH40K
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Maximum Collector Current(A)
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50
0.20
0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: Duty factor Peak thJC
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PH40K
2500
2000
Gate-to-Emitter Voltage
1MHz Cies SHORTED Cres Coes
400V
Capacitance (pF)
Cies
1500
1000
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
960V
960V
Gate Resistance (Ohm) Gate Resistance
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRG4PH40K
Collector-to-Emitter Current
Total Switching Losses (mJ)
960V
SAFE OPERATING AREA
1000 10000
Collector-to-emitter Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
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IRG4PH40K
960V
960V C@25°C
480µF 960V
Driver .T.; Note: upply, pulse idth inductor obta
Fig. Clamped Inductive
Load Test Circuit
Fig. Pulsed Collector
Current Test Circuit
river* 1000V
Driver same type D.U.T., 960V
Fig. Switching Loss
Test Circuit
Fig. Switching Loss
Waveforms
t=5µ
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IRG4PH40K
Notes:
Repetitive rating; 20V, pulse width limited
max. junction temperature. fig.
Repetitive rating; pulse width limited maximum
junction temperature.
80%(VCES), 20V, 10µH,
(See fig. 13a)
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
Case Outline Dimensions TO-247AC
LEAD 1234-
GATE COLLE COLLE
CONFORMS JEDEC OUTLINE TO-247AC (TO-3P)
illim
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 EUROPEAN REGIONAL CENTRE: 439/445 Godstone Whyteleafe, Surrey OBL, Tel: (0)20 8645 8000 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 JAPAN: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Tel: (0)3 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: (0)838 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data specifications subject change without notice. 6/00
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Note: most current drawings please refer website http://www.irf.com/package/
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