IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
|
|
|
Top Searches for this datasheet
-91582B
IRG4PC50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated UltraFast IGBT
VCES 600V VCE(on) typ. 1.84V
Short Circuit Rated UltraFast: Optimized high operating frequencies >5.0 kHz, Short Circuit Rated 10µs @125°C, Generation IGBT design provides tighter parameter distribution higher efficiency than Generation IGBT co-packaged with HEXFREDultrafast, ultra-soft recovery anti-parallel diodes bridge configurations Industry standard TO-247AC package Generation IGBTs offer highest efficiencies available HEXFRED diodes optimized performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed "drop-in" replacement equivalent industry-standard Generation IGBTs Parameter
@VGE 15V,
Benefits
Absolute Maximum Ratings
Max.
+150 VCES 25°C 100°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw.
TO-247AC
Units
(0.063 (1.6mm) from case) (1.1
Thermal Resistance
Parameter
RqJC RqJC RqCS RqJA Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
0.24 (0.21)
Max.
0.64 0.83
Units
°C/W
(oz)
www.irf.com
12/3/98
IRG4PC50KD
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
DV(BR)CES/DTJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) DVGE(th)/DTJ ICES IGES
Gate Threshold Voltage Temperature Coeff. Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min.
Typ. 0.47 1.84 2.19 1.79
Max. Units Conditions 250µA V/°C 1.0mA figures 25A, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, 600V 6500 600V, 150°C figure 25A, 150°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. 1.61 0.84 2.45 3.53 3200 Max. Units Conditions 400V figure 25°C 30A, 480V 15V, 5.0W Energy losses include "tail" diode reverse recovery 3.0see figures 9,10,18 360V, 125°C 15V, VCPK 500V 150°C, figures 11,18 30A, 480V 15V, 5.0W Energy losses include "tail" diode reverse recovery Measured from package figure 1.0MHz 25°C figure 125°C 25°C figure 125°C 200V 25°C figure 1200 125°C di/dt 200A/µs A/µs 25°C figure 125°C
www.irf.com
IRG4PC50KD
oth:
LOAD CURRENT
sink ified
ipation rated voltage
Frequency (KHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
1000
1000
Collector-to-Emitter Current
150°C
Collector-to-Emitter Current
PULSE WIDTH
20µs PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
www.irf.com
IRG4PC50KD
Maximum Collector Current(A)
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01
0.001 0.00001
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRG4PC50KD
5000
Gate-to-Emitter Voltage
4000
Cies Cres Coes
1MHz SHORTED
400V
Capacitance (pF)
Cies
3000
2000
1000
Coes
Cres
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V
=5.0W 480V
Gate Resistance
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
www.irf.com
Fig. Typical Switching Losses Junction Temperature
IRG4PC50KD
Collector-to-Emitter Current
Total Switching Losses (mJ)
5.0W 480V
1000
SAFE OPERATING AREA
1000
Collector-to-emitter Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
200V 125°C 25°C
(ns)
(A/µs)
1000
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current
Fig. Typical Reverse Recovery dif/dt
www.irf.com
IRG4PC50KD
1500
1200
1000
1000
Fig. Typical Recovery Current dif/dt
Fig. Typical Stored Charge dif/dt
10000
i(re
1000
Mechanical drawings, Appendix Test Circuit diagrams, Appendix Switching Loss Waveforms, Appendix
www.irf.com
1000
Fig. Typical di(rec)M/dt dif/dt
IRG4PC50KD
Same type device .U.T.
430µF
d(off)
d(on)
t=5µs (Eon +Eoff Eoff
Fig. Test Circuit Measurement
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
CURRENT
AVEFORMS td(on) ieIc RECOVERY ENERG
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr, www.irf.com
IRG4PC50KD
Figure 18e. Macro Waveforms Figure 18a's Test Circuit
1000V
D.U.T.
800V
800V @25°C
Figure Clamped Inductive Load Test Circuit
Figure Pulsed Collector Current Test Circuit
www.irf.com
IRG4PC50KD
Notes:
E=20V; pulse width limited maximum junction temperature eeiie C=80%(VCES) E=20V, L=10µH,
Case Outline TO-247AC
3.65 (.14 3.55 (.14 0.25 (.01 -A5.50 (.217)
(.62 (.60
5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059)
NOTES: 14.5M 1982. LLIN
(.80 (.77
5.50 (.217) 4.50 (.177)
1234-
GATE
(.583) (.559)
0.80 (.03 0.40 (.01 2.60 (.10 2.20 (.08
2.40 (.09 2.00 (.07 5.45 (.21
(20m -247 PART NUMBER
3.40 (.13 3.00 (.11
CONFORM JEDEC TLINE TO-247AC (TO-3P)
ensio illim
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 12/98
www.irf.com
Note: most current drawings please refer website http://www.irf.com/package/
Other recent searches
VNB14NV04 - VNB14NV04 VNB14NV04 Datasheet
VND14NV04 - VND14NV04 VND14NV04 Datasheet
VND14NV04-1 - VND14NV04-1 VND14NV04-1 Datasheet
VNS14NV04 - VNS14NV04 VNS14NV04 Datasheet
MAPCGM0002-DIE - MAPCGM0002-DIE MAPCGM0002-DIE Datasheet
FST-22A-2 - FST-22A-2 FST-22A-2 Datasheet
Am7920 - Am7920 Am7920 Datasheet
2SK2110 - 2SK2110 2SK2110 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
