IRFP150N HEXFET® Power MOSFET Advanced Process Technology Dy
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91503D
IRFP150N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS 100V
RDS(on) 0.036W
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. TO-247 package preferred commercialindustrial applications where higher power levels preclude TO-220 devices. TO-247 similar superior earlier TO-218 package because isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 srew
Max.
(1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
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Typ.
0.24
Max.
0.95
Units
°C/W
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
07/15/02
IRFP150N
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th)
IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-to-Source Leakage Current
td(on) td(off) Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
Typ. 0.11
1900
Max. Units Conditions 250µA V/°C Reference 25°C, 0.036 10V, VGS, 250µA 25V, 100V, 80V, 150°C -100 -20V 10V, Fig. 3.6W 2.9W Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, =23A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle
Uses IRF1310N data test conditions Uses IRF1310N data test conditions.
Starting 25°C, 1.7mH
22A. (See Figure
22A, di/dt 180A/µs, V(BR)DSS,
175°C
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IRFP150N
1000
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
4.5V
20us PULSE WIDTH
20us PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
10.0
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
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Normalized On-Resistance Temperature
IRFP150N
3500
3000
Gate-to-Source Voltage
Ciss Crss Coss
1MHz SHORTED
Capacitance (pF)
2500
Ciss
2000
1500
1000
Coss Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us
100us
Single Pulse
10ms
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRFP150N
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.001 0.01
0.01 0.00001
0.0001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP150N
1000
Single Pulse Avalanche Energy (mJ)
9.0A BOTTOM
12a. Unclamped Inductive Test Circuit
Starting TJTj, Junction Temperature (°C) Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRFP150N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
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IRFP150N Package Outline
TO-247AC Outline Dimensions shown millimeters (inches)
15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) 0.25 (.010) -A5.50 (.217) 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145)
SOURCE
5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059)
5.50 (.217) 4.50 (.177)
NOTES: 14.5M 1982. LLIN TLIN -247-A
2.40 (.094) 2.00 (.079) 5.45 (.215)
1.40 (.056) 1.00 (.039) 0.25 (.010) 3.40 (.133) 3.00 (.118)
0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087)
Part Marking Information
TO-247AC
CODE 3A1Q
LOGO ASSEMBLY CODE
PART NUMBER YEAR
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 07/02
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Note: most current drawings please refer website http://www.irf.com/package/
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