IRF9520N HEXFET® Power MOSFET Advanced Process Technology Dy

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IRF9520N HEXFET® Power MOSFET Advanced Process Technology Dy

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91521A
IRF9520N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
VDSS -100V
RDS(on) 0.48 -6.8A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. TO-220 package universally preferred commercial-industrial applications power dissipation levels approximately watts. thermal resistance package cost TO-220 contribute wide acceptance throughout industry.
TO-220AB
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, -10V Continuous Drain Current, -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 srew
Max.
-6.8 -4.8 0.32 -4.0 -5.0 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
Units
°C/W
5/13/98
IRF9520N
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -100 -2.0
Typ. -0.10
Max. Units Conditions -250µA V/°C Reference 25°C, -1mA 0.48 -10V, -4.0A -4.0 -250µA -50V, -4.0A -100V, -250 -80V, 150°C -100 -20V -4.0A -80V -10V, Fig. -50V -4.0A Fig. Between lead, (0.25in.) from package center contact -25V 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol -6.8 showing integral reverse junction diode. -1.6 25°C, -4.0A, 25°C, -4.0A di/dt -100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
-4.0A, di/dt -300A/µs, V(BR)DSS,
175°C
Starting 25°C,
-4.0A. (See Figure
Pulse width 300µs; duty cycle
IRF9520N
Drain-to-Source Current
Drain-to-Source Current
-15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V
-15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V
-4.5V
20µs PULSE WIDTH
-4.5V
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics,
Typical Output Characteristics,
-6.7A
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
-10V
-VGS Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRF9520N
-VGS, Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
-4.0
=-80V =-50V =-20V
Capacitance (pF)
Ciss
Coss Crss
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
OPERATION THIS AREA LIMITED RDS(on)
-ISD Reverse Drain Current
10us
Drain Current
100us
10ms
Single Pulse
1000
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRF9520N
D.U.T.
Drain Current
-10V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF9520N
Single Pulse Avalanche Energy (mJ)
-1.7A -2.5A BOTTOM -4.0A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
(BR)DSS
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
-10V
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
D.U.T.
IRF9520N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity D.U.T P-Channel
Driver Gate Drive P.W. Period
P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
5.0V Logic Level Drive Devices P-Channel HEXFETS
IRF9520N
Package Outline
TO-220AB Outline Dimensions shown millimeters (inches)
(.149 (.139 6.47 (.25 6.10 (.24 4.69 4.20 (.05 (.04
2.87 (.11 2.62 (.10
5.24 (.60 4.84 (.58
1.15 (.04
GATE
4.09 (.55 3.47 (.53
4.06 (.16 3.55 (.14
0.93 (.03 0.69 (.02
0.55 (.02 0.46 (.01
(.01
2.54 (.10 4.5M
(.11 (.10
Part Marking Information
TO-220AB
EXAMP ASSEMB
TIOL TIFIE ASSEMB ASSEMBLY
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 5/98
Note: most current drawings please refer website http://www.irf.com/package/

IRF9520N HEXFET® Power MOSFET Advanced Process Technology Dy

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