Download

PDF Abstract Text:

PD - 91351

IRF530N

PD - 91351
IRF530N
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dv / dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Units
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Units
www.irf.com
IRF530N
V(BR)DSS
V(BR)DSS / TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min. 100 --- --- 2.0 12 --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.11 --- --- --- --- --- --- --- --- --- --- 9.2 22 35 25 4.5 7.5
Source-Drain Ratings and Characteristics
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Repetitive rating pulse width limited by
max. junction temperature. (See fig. 11)
operation outside rated limits.
ISD 9.0A, di / dt 410A / µs, VDD V(BR)DSS,
TJ 175°C
www.irf.com
IRF530N
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
IRF530N
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
FOR TEST CIRCUIT SEE FIGURE 13
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000 OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
ID , Drain-to-Source Current (A)
100µsec
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF530N
VGS RG
D.U.T.
I D , Drain Current (A)
Fig 10a. Switching Time Test Circuit
TC , Case Temperature
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRF530N
EAS , Single Pulse Avalanche Energy (mJ)
BOTTOM
ID 3.7A 6.4A 9.0A
Fig 12a. Unclamped Inductive Test Circuit
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
.2µF .3µF
QGS VG QGD
D.U.T.
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRF530N
Peak Diode Recovery dv / dt Test Circuit
D.U.T
Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer
RG VGS · dv / dt controlled by RG · ISD controlled by Duty Factor "D" · D.U.T. - Device Under Test
Reverse Polarity of D.U.T for P-Channel
P.W. Period
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di / dt D.U.T. VDS Waveform Diode Recovery dv / dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
www.irf.com
IRF530N
Package Outline
TO-220AB Dimensions are shown in millimeters (inches)
2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8)
0.93 (.03 7) 0.69 (.02 7) M B A M
Part Marking Information
TO-220AB
IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE
PART NU MBER IR F 10 1 0 9246 9B 1M
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.3 / 01
www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com / package /