HEXFET® Power MOSFET Applications High frequency DC-DC converters

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HEXFET® Power MOSFET Applications High frequency DC-DC converters

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94504
HEXFET® Power MOSFET
Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies Benefits Gate-to-Drain Charge Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage Current Absolute Maximum Ratings
25°C 100°C 25°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torqe, 6-32 screw
IRF1312 IRF1312S IRF1312L
VDSS
RDS(on)
TO-220AB IRF1312
D2Pak IRF1312S
TO-262 IRF1312L
Max.
(1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) page
Typ.
0.50
Max.
0.73
Units
°C/W
www.irf.com
7/01/02
IRF1312/S/L
Static 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. 0.078 Max. Units Conditions 250µA V/°C Reference 25°C, 10V, VGS, 250µA 76V, 64V, 150°C -100 -20V
Dynamic 25°C (unless otherwise specified)
td(on) td(off) Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. 5450 1910 Max. Units Conditions 25V, 10V, 1.0MHz 1.0V, 1.0MHz 64V, 1.0MHz
Avalanche Characteristics
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
Max.
Units
Diode Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 57A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
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IRF1312/S/L
1000
8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V
1000
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V
5.0V 20µs PULSE WIDTH 25°C
5.0V
0.01
20µs PULSE WIDTH 25°C
VDS, Drain-to-Source Voltage
VDS, Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000.00
Drain-to-Source Current
100.00
175°C
RDS(on) Drain-to-Source Resistance
25°C
1.00
(Normalized)
10.00
0.10
0.01
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRF1312/S/L
100000
Gate-to-Source Voltage
SHORTED Crss Coss
VDS= VDS= VDS=
Capacitance (pF)
10000
Ciss
1000
Coss Crss
TEST CIRCUIT FIGURE
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000.0
10000 OPERATION THIS AREA LIMITED RDS(on)
Drain-to-Source Current
ISD, Reverse Drain Current
1000
100.0
175°C
100µsec 1msec 25°C 175°C Single Pulse
10.0
25°C
10msec
1000 Drain-toSource Voltage
VSD, Source-toDrain Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRF1312/S/L
LIMITED PACKAGE
Drain Current
D.U.T.
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature (°C)
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
thJC
0.50
0.20
Thermal Response
0.10 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak
0.05
0.02 0.01
thJC
0.01 0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF1312/S/L
D.U.T
Single Pulse Avalanche Energy (mJ)
DRIVER
BOTTOM
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature (°C)
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRF1312/S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity D.U.T P-Channel
Driver Gate Drive P.W. Period
P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
[ISD
5.0V Logic Level Drive Devices N-channel HEXFET® power MOSFETs
www.irf.com
IRF1312/S/L
TO-220AB Package Outline
Dimensions shown millimeters (inches)
2.87 (.113) 2.62 (.103)
10.54 (.415) 10.29 (.405)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
1.15 (.045)
LEAD ASSIGNMENTS GATE DRAIN SOURCE DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
2.92 (.115) 2.64 (.104)
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: IRF1010 CODE 1789 EMBLED 1997 EMBLY LINE INTERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
DATE CODE YEAR 1997 WEEK LINE
www.irf.com
IRF1312/S/L
D2Pak Package Outline
D2Pak Part Marking Information
THIS IRF530S WITH CODE 8024 EMBLED 2000 SEMBLY LINE INTERNATIONAL RECTIFIER LOGO EMBLY CODE PART NUMBER F530S CODE YEAR 2000 WEEK LINE
www.irf.com
IRF1312/S/L
TO-262 Package Outline
IGBT GATE COLLECTOR EMITTER COLLECTOR
TO-262 Part Marking Information
EXAMPLE: IRL3103L CODE 1789 EMBLED 1997 EMBLY LINE ERNATIONAL RECTIFIER LOGO SEMBLY CODE PART NUMBER
DATE CODE YEAR 1997 WEEK LINE
www.irf.com
IRF1312/S/L
D2Pak Tape Reel Information
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961)
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 400µs; duty cycle Coss eff. fixed capacitance that gives same charging time
Coss while rising from VDSS
Starting 25°C, 0.15mH
57A. (See Figure
57A, di/dt 410A/µs, V(BR)DSS,
175°C
Calculated continuous current based maximum allowable
junction temperature. Package limitation current 75A.
This only applied TO-220AB package
This applied D2Pak, when mounted square FR-4 G-10 Material
recommended footprint soldering techniques refer application note #AN-994.
TO-220AB package recommended Surface Mount Application Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.7/02
www.irf.com
Note: most current drawings please refer website http://www.irf.com/package/

HEXFET® Power MOSFET Applications High frequency DC-DC converters

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