REPETITIVE AVALANCHE dv/dt RATED HEXFET® TRANSISTOR IRHN9150

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REPETITIVE AVALANCHE dv/dt RATED HEXFET® TRANSISTOR IRHN9150

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90885C
REPETITIVE AVALANCHE dv/dt RATED
HEXFET® TRANSISTOR
IRHN9150 IRHN93150 JANSR2N7244U JANSF2N7422U
(REF:MIL-PRF-19500/662) P-CHANNEL
-100 Volt, 0.073, HARD HEXFET
International Rectifier's P-Channel HARD technology HEXFETs demonstrate excellent threshold voltage stability breakdown voltage stability total radiation doses high Rads (Si). Under identical pre- postradiation test conditions, International Rectifier's P-Channel HARD HEXFETs retain identical electrical specifications Rads (Si) total dose. compensation gate drive circuitry required. These devices also capable surviving transient ionization pulses high 1012 Rads (Si)/Sec, return normal operation within microseconds. Single Event Effect (SEE) testing International Rectifier P-Channel HARD HEXFETs demonstrated virtual immunity failure. Since PChannel HARD process utilizes International Rectifier's patented HEXFET technology, user expect highest quality reliability industry. P-Channel HARD HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling temperature stability electrical parameters. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers high-energy pulse circuits space weapons environments.
HARD
Product Summary
Part Number IRHN9150 IRHN93150 BVDSS -100V -100V RDS(on) 0.080 0.080 -22A -22A
Features:
Radiation Hardened Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount Lightweight
Absolute Maximum Ratings
Parameter
-12V, 25°C -12V, 100°C 25°C dv/dt TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
Pre-Irradiation
IRHN9150, IRHN93150 Units
W/°C V/ns
(0.063 (1.6mm) from case (typical)
1/6/99
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IRHN9150, IRHN93150,JANSR-,JANSF-,2N7422U Devices
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
-100 -2.0
Units
-0.093 0.080 0.085 -4.0 -250 -100 V/°C
Test Conditions
-1.0mA Reference 25°C, -1.0mA -12V, -14A -12V, -22A VGS, -1.0mA -15V, -14A VDS= Rating,VGS=0V Rating 125°C -20V =-12V, -22A Rating -50V, =-22A, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
ckage Maue esrd ckage bnigpd
Modified MOSFET igteitrn
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4300 1100
-25V 1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-3.0
Test Conditions
Modified MOSFET symbol show
25°C, -22A, 25°C, -22A, di/dt -100A/µs -50V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
0.83
Units
°C/W
Test Conditions
soldered square copper-clad board
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Radiation Characteristics
IRHN9150, IRHN93150, JANSR-,JANSF-,2N7422U Devices
Radiation Performance Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs tested verify their hardness capability. hardness assurance program International Rectifier prises three radiation environments. Every manufacturing tested dose rate (total dose) environment MIL-STD-750, test method 1019 condition International Rectifier imposed standard gate condition volts note bias condition equal device rated voltage note Pre- post- irradiation limits devices irradiated Rads (Si) identical presented Table1, column1, IRHN9150. Post-irradiation limits devices irradiated Rads (Si) presented Table column IRHN93150. values Table will either dose rate test circuits that used. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison. should noted that radiation level Rads (Si) only parametric limit change VGS(th) maximum. High dose rate testing done special request basis using dose rate 1012 Rads (Si)/Sec (See Table International Rectifier radiation hardened P-Channel HEXFETs considered neutron-tolerant, stated MIL-PRF-19500 Group International Rectifier radiation hardened P-Channel HEXFETs have been characterized heavy Single Event Effects (SEE) environments. Single Event Effects characterization shown Table
Table Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Diode Forward Voltage
IRHN9150 IRHN93150
100K Rads (Si) 300K Rads (Si) Units
Test Conditions
-1.0mA VDS, -1.0mA -20V VDS=0.8 Rating, VGS=0V -12V, -14A 25°C, -22A,VGS
-100 -2.0
-5.0 -100 0.080 -3.0
-100 -2.0 -4.0 -100 0.080 -3.0
Table High Dose Rate
Parameter
VDSS di/dt
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
Units Test Conditions Applied drain-to-source voltage during gamma-dot -100 Peak radiation induced photo-current -800 -160 A/µsec Rate rise photo-current Circuit inductance required limit di/dt
Table Single Event Effects
(Si) (MeV/mg/cm2)
Fluence (ions/cm2)
Range (µm)
VDSBias
-100
Bias
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IRHN9150, IRHN93150,JANSR-,JANSF-,2N7422U Devices
Pre-Irradiation
Drain-to-Source Current
-5.0V
20µs PULSE WIDTH
Drain-to-Source Current
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-5.0V
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
-22A
Drain-to-Source Current
-50V 20µs PULSE WIDTH
-12V
Gate-to-Source Voltage
Typical Transfer Characteristics
Junction Temperature(
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHN9150, IRHN93150, JANSR-,JANSF-,2N7422U Devices
7000
6000
-VGS Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
-22A =-80V =-50V =-20V
Capacitance (pF)
5000
Ciss
4000
3000
2000
Coss
1000
Crss
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
100us
10ms
Single Pulse
1000
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
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Maximum Safe Operating Area
IRHN9150, IRHN93150,JANSR-,JANSF-,2N7422U Devices
Pre-Irradiation
D.U.T.
Drain Current
-12V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
Notes: Duty factor Peak thJC
0.01
0.001 0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHN9150, IRHN93150, JANSR-,JANSF-,2N7422U Devices
1200
Single Pulse Avalanche Energy (mJ)
1000
-9.8A -14A BOTTOM -22A
-20V -12V
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-12V
.2µF .3µF
-12V
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
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13b. Gate Charge Test Circuit
D.U.T.
IRHN9150, IRHN93150,JANSR-,JANSF-,2N7422U Devices
Repetitive Rating; Pulse width limited
maximum junction temperature. Refer current HEXFET reliability report. -25V, Starting 25°C, [0.5 (IL2) Peak -22A, -12V, -22A, di/dt -450A/µs, BVDSS, 150°C Suggested 2.35 Pulse width Duty Cycle irradiation MIL-STD-750, method 1019, condition
Pre-Irradiation
Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. rated BVDSS (pre-Irrradiation) applied during irradiation MlL-STD-750, method 1019, condition This test performed using flash x-ray source operated e-beam mode (energy ~2.5 MeV), nsec pulse. Pre-Irradiation Post-Irradiation test conditions identical facilitate direct comparison circuit applications.
Case Outline Dimensions SMD-1
SMD-1
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REPETITIVE AVALANCHE dv/dt RATED HEXFET® TRANSISTOR IRHN9150

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