REPETITIVE AVALANCHE dv/dt RATED IRHM7450SE N-CHANNEL H
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91223C
REPETITIVE AVALANCHE dv/dt RATED
IRHM7450SE
N-CHANNEL
HEXFET TRANSISTOR
SINGLE EVENT EFFECT (SEE) HARD
500Volt, 0.51, (SEE) HARD HEXFET
International Rectifier's (SEE) HARD technology HEXFETs demonstrate immunity failure. Additionally, under identical pre- post-irrradiation test conditions, International Rectifier's HARD HEXFETs retain identical electrical specifications Rads (Si) total dose. compensation gate drive circuitry required. These devices also capable surviving transient ionization pulses high 1012 Rads (Si)/Sec, return normal operation within microseconds. Since process utilizes International Rectifier's patented HEXFET technology, user expect highest quality reliability industry. HARD HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling temperature stability electrical parameters. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers high-energy pulse circuits space weapons environments.
Product Summary
Part Number IRHM7450SE BVDSS 500V RDS(on) 0.51
Features:
Radiation Hardened Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
Pre-Irradiation
IRHM7450SE Units
W/°C V/ns
(0.063 (1.6mm) from case sec.) (typical)
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1/6/99
IRHM7450SE Devices
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.51 0.57 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 7.0A 12V, VGS, 1.0mA 15V, 7.0A VDS= Rating,VGS=0V Rating 125°C -20V 12V, Rating 250V, 12A, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
ckage Maue esrd ckage bnigpd
Modified MOSFET itrn
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
2800
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
Modified MOSFET symbol show
25°C, 12A, 25°C, 12A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
0.83 0.21
Units
°C/W
Test Conditions
Typical socket mount
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Radiation Characteristics
Radiation Performance Hard HEXFETs
IRHM7450SE Devices
dose rate test circuits that used. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison. should noted that radiation level Rads (Si) Every manufacturing tested dose rate only parameter limit change VGSTh minimum (total dose) environment MlL-STD-750, test method 1019 condition International Rectifier High dose rate testing done special imposed standard gate condition volts note request basis using dose rate Rads (Si)/Sec Table bias condition equal device rated voltage note Post-irradiation limits International Rectifier radiation hardened HEXFETs devices irradiated Rads (Si) pre- have been characterized heavy Single Event sented Table column IRHM7450SE. val- Effects (SEE) environments. Single Event Effects Table will either characterization shown Table International Rectifier Radiation Hardened HEXFETs tested verify their hardness capability. hardness assurance program International Rectifier comprises radiation environments.
Table Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1
IRHM7450SE
100K Rads (Si)
Units
Test Conditions
1.0mA VDS, 1.0mA -20V VDS=0.8 Rating, VGS=0V 12V, 7.0A 25°C, 12A,VGS
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Diode Forward Voltage
-100 0.51
Table High Dose Rate
Parameter
VDSS di/dt
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
Units Test Conditions Applied drain-to-source voltage during gamma-dot Peak radiation induced photo-current A/µsec Rate rise photo-current Circuit inductance required limit di/dt
Table Single Event Effects
(Si) (MeV/mg/cm2)
Fluence (ions/cm2)
Range (µm)
VDSBias
Bias
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IRHM7450SE Devices
Pre-Irradiation
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHM7450SE Devices
5000
4000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
400V 250V 100V
Capacitance (pF)
3000
2000
1000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us 100us 10ms
Single Pulse
1000 10000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
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Maximum Safe Operating Area
IRHM7450SE Devices
Pre-Irradiation
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
Notes: Duty factor Peak thJC
0.01
0.001 0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7450SE Devices
1200
Single Pulse Avalanche Energy (mJ)
BOTTOM
1000
5.4A 7.6A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
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13b. Gate Charge Test Circuit
IRHM7450SE Devices
Repetitive Rating; Pulse width limited
maximum junction temperature. Refer current HEXFET reliability report. Starting 25°C, [0.5 (IL2) =50V Peak 12A, 12A, di/dt 400A/µs, BVDSS, 150°C Suggested 2.35 Pulse width Duty Cycle
Pre-Irradiation
Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. rated BVDSS (pre-irradiation) applied during irradiation MlL-STD -750, method 1019, condition This test performed using flash x-ray source operated e-beam mode (energy ~2.5 MeV), nsec pulse. Pre-Irradiation Post-Irradiation test conditions identical facilitate direct comparison circuit applications.
Case Outline Dimensions TO-254AA
ITTE
LEGEND DRAIN SOURCE GATE
LEGEND DRAIN SOURCE GATE
Conforms JEDEC Outline TO-254AA Dimensions Millimeters Inches
CAUTION BERYLLIA WARNING MIL-PRF-19500 Package containing beryllia shall ground, sandblasted, machined, have other operations perfomed them which will produce beryllia beryllium dust. Furthermore, beryllium oxide packages shall placed acids that will produce fumes containing beryllium.
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