REPETITIVE AVALANCHE dv/dt RATED HEXFET TRANSISTOR 100Volt,

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REPETITIVE AVALANCHE dv/dt RATED HEXFET TRANSISTOR 100Volt,

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90732B
REPETITIVE AVALANCHE dv/dt RATED
HEXFET TRANSISTOR
100Volt, 0.60, MEGA HARD HEXFET
International Rectifier's HARD technology HEXFETs demonstrate excellent threshold voltage stability breakdown voltage stability total radiaition doses high 1x106 Rads(Si). Under identical pre- post-irradiation test conditions, International Rectifier's HARD HEXFETs retain identical electrical specifications Rads (Si) total dose. compensation gate drive circuitry required. These devices also capable surviving transient ionization pulses high 1012 Rads (Si)/Sec, return normal operation within microseconds. Since HARD process utilizes International Rectifier's patented HEXFET technology, user expect highest quality reliability industry. HARD HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling temperature stability electrical parameters. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers high-energy pulse circuits space weapons environments.
IRHE7110 IRHE8110
CHANNEL
MEGA HARD
Product Summary
Part Number IRHE7110 IRHE8110 BVDSS 100V 100V RDS(on) 0.60 0.60 3.5A 3.5A
Features:
Radiation Hardened Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 0.12
Pre-Irradiation
IRHE7130, IRHE8130 Units
W/°C
V/ns
(0.063 (1.6mm) from case 10s) 0.42 (typical)
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10/14/98
IRHE7110, IRHE8110 Devices
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.10 0.60 0.69 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 2.2A 12V, 3.5A VGS, 1.0mA 15V, 2.2A VDS= Rating,VGS=0V Rating 125°C -20V =12V, 3.5A Rating 50V, 3.5A,
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
Measured from drain Modified MOSFET symlead, (0.25 showing internal from package center inductances. die. Measured from source lead, (0.25 from package source bonding pad.
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
Modified MOSFET symbol showing integral reverse junction rectifier. 25°C, 26A, 25°C, 26A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC Rth-PCB Junction-to-Case Junction-to-PCBoard
Units
°C/W
Test Conditions
Solder copper clad board
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Radiation Characteristics
Radiation Performance Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs tested verify their hardness capability. hardness assurance program International Rectifier comprises three radiation environments. Every manufacturing tested dose rate (total dose) environment MIL-STD-750, test method 1019 condition International Rectifier imposed standard gate condition volts note bias condition equal device rated voltage note Pre- post- irradiation limits devices irradiated Rads (Si) identical presented Table column IRHE7130. Post-irradiation limits devices irradiated Rads (Si) presented
IRHE7110, IRHE8110 Devices
Table column IRHE8130. values Table will either dose rate test circuits that used. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison. High dose rate testing done special request basis using dose rate 1012 Rads (Si)/Sec (See Table International Rectifier radiation hardened HEXFETs have been characterized heavy Single Event Effects (SEE) environments. Single Event Effects characterization shown Table
Table Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1
IRHE7110
-100 0.60
IRHE8110 Test Conditions
1.0mA VDS, 1.0mA VDS=0.8 Rating, 12V, 2.2A 25°C, =3.5A,VGS 1.25 -100 0.80
100K Rads (Si) 1000K Rads (Si) Units
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Diode Forward Voltage
Table High Dose Rate
Parameter
VDSS di/dt
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
Units Test Conditions Applied drain-to-source voltage during gamma-dot Peak radiation induced photo-current A/µsec Rate rise photo-current Circuit inductance required limit di/dt
Table Single Event Effects
(Si) (MeV/mg/cm2)
Fluence (ions/cm2)
Range (µm)
VDSBias
Bias
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IRHE7110, IRHE8110 Devices
Post-Irradiation
Typical Response Gate Threshhold Voltage Total Dose Exposure
Typical Response On-State Resistance Total Dose Exposure
Typical Response Transconductance Total Dose Exposure
Typical Response Drain Source Breakdown Total Dose Exposure
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Post-Irradiation
IRHE7110, IRHE8110 Devices
Typical Zero Gate Voltage Drain Current Total Dose Exposure
Typical On-State Resistance Neutron Fluence Level
Gate Stress VGSS Equals Volts During Radiation
Typical Transient Response Hard HEXFET During 1x1012 (Si)/Sec Exposure
VDSS Stress Equals BVDSS During Radiation
High Dose Rate (Gamma Dot) Test Circuit
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IRHE7110, IRHE8110 Devices
Note: Bias Conditions during radiation: Vdc,
Radiation Characterstics
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads(Si)
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Radiation Characterstics
IRHE7110, IRHE8110 Devices
Note: Bias Conditions during radiation: Vdc,
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads(Si)
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IRHE7110, IRHE8110 Devices
Pre-Irradiation
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHE7110, IRHE8110 Devices
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHE7110, IRHE8110 Devices
Pre-Irradiation
D.U.T.
Pulse Width Duty Factor
27a. Switching Time Test Circuit
Maximum Drain Current Case Temperature
td(on)
d(off)
27b. Switching Time Waveforms
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHE7110, IRHF8110 Devices
29a. Unclamped Inductive Test Circuit
29c. Maximum Avalanche Energy Drain Current
29b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
Fig30a. Basic Gate Charge Waveform
30b. Gate Charge Test Circuit
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IRHE7110, IRHE8110 Devices
Figures through pre-radiation
curves Repetitive Rating; Pulse width limited maximum junction temperature. Refer current HEXFET reliability report. 25V, Starting 25°C, Peak 3.5A,L>3.0mH RG=25 3.5A, di/dt 140A/µs, BVDSS, 150°C Suggested =7.5 Pulse width Duty Cycle
Pre-Irradiation
Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, codition Total Dose Irradiation with Bias. rated BVDSS (pre-radiation) applied during irradiation MlL-STD-750, method 1019, condition This test performed using flash x-ray source operated e-beam mode (energy ~2.5 MeV), nsec pulse. Pre-Irradiation Post-Irradiation test conditions identical facilitate direct comparison circuit applications.
Case Outline Dimensions Leadless Chip Carrier (LCC) Package
Case Style Leadless Chip Carrier (LCC)
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 10/98
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REPETITIVE AVALANCHE dv/dt RATED HEXFET TRANSISTOR 100Volt,

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