Data Sheet June 2008 FN9000.3 Single Event Radiation Hardened Qua

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Data Sheet June 2008 FN9000.3 Single Event Radiation Hardened Qua

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IS-139ASRH
Data Sheet June 2008 FN9000.3
Single Event Radiation Hardened Quad Voltage Comparator
single event effects total dose radiation hardened IS-139ASRH consists four independent single dual supply voltage comparators single monolithic substrate. common mode input voltage range includes ground, even when operated from single supply, supply current makes these comparators suitable power applications. These types were designed directly interface with CMOS inputs.
Features
Electrically Screened 5962-01510 Qualified MIL-PRF-38535 Requirements Radiation Hardness Total Dose. 300krad(Si) (Max) Single Event Latch-up >84MeV/mg/cm2 Single Event Upset >84MeV/mg/cm2 Operating Supply Voltage Range Input Offset Voltage (VIO). (Max) Quiescent Supply Current (Max) Differential Input Voltage Range Equal Supply Voltage
IS-139ASRH fabricated dielectrically isolated Hard Silicon Gate (RSG) process, which provides immunity single event latch-up capability highly reliable performance radiation environment. Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications IS-139ASRH contained 5962-01510. "hot-link" provided Intersil website downloading.
Applications
DC-DC Power Conversion Pulse Generators Timing Circuitry Level Shifting Analog Digital Conversion
Pinout
IS9-139ASRH (FLATPACK CDFP4-F20) VIEW
OUTB OUTA -INA +INA -INB OUTC OUTD +IND -IND +INC -INC +INB
Ordering Information
ORDERING NUMBER 5962F0151001VXC 5962F0151001QXC IS9-139ASRH/PROTO INTERNAL MKT. NUMBER IS9-139ASRH-Q IS9-139ASRH-8 IS9-139ASRH/PROTO TEMP. RANGE (°C) +125 +125 +125 PACKAGE DRAWING NUMBER K20.A K20.A K20.A
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 1-888-468-3774 Intersil (and design) registered trademark Intersil Americas Inc. Copyright Intersil Americas Inc. 2002, 2008. Rights Reserved. Star*Poweris trademark Intersil Americas Inc. other trademarks mentioned property their respective owners.
Characteristics
DIMENSIONS 3750µm 4510µm (148 mils mils) 483µm 25.4µm mils mil) INTERFACE MATERIALS Glassivation Type: Silox (SiO2) Thickness: Metallization Type: AlSiCu Thickness: Substrate Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density <2.0 A/cm2 Transistor Count
Metallization Mask Layout
IS-139ASRH
OUTA
-INA +INA -INB +INB -INC +INC -IND +IND
OUTB
OUTC
OUTD
Intersil U.S. products manufactured, assembled tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications viewed www.intersil.com/design/quality
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design, software and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, www.intersil.com
FN9000.3 June 2008

Data Sheet June 2008 FN9000.3 Single Event Radiation Hardened Qua

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