Data Sheet July 2008 FN6411.1 Radiation Hardened CMOS Dual SPDT A

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Data Sheet July 2008 FN6411.1 Radiation Hardened CMOS Dual SPDT A

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HS-303ARH, HS-303BRH
Data Sheet July 2008 FN6411.1
Radiation Hardened CMOS Dual SPDT Analog Switch
HS-303ARH HS-303BRH analog switches monolithic devices fabricated using Intersil's dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology insure latch-up free operation. They pinout compatible functionally equivalent HS-303RH, offer improved 300kRAD(Si) total dose capability. These switches offers low-resistance switching performance analog voltages supply rails. "ON" resistance stays reasonably constant over full range operating voltage current. "ON" resistance also stays reasonably constant when exposed radiation. Break-before-make switching controlled digital inputs. HS-303ARH should operated with nominal ±15V supplies, while HS-303BRH should operated with nominal ±12V supplies.
Features
QML, MIL-PRF-38535 Radiation Performance Total Dose: 3x105 RAD(Si) SEE: 60MeV-mg/cm2 Incident Angle, <150pC Charge Transferred Output Switch Latch-Up, Dielectrically Isolated Device Islands Pinout Functionally Compatible with Intersil HS-303RH HI-303 Series Analog Switches Analog Signal Range Equal Supply Voltage Range Leakage 100nA (Max, Post-Rad) (Max, Post-Rad) Standby Supply Current +150µA/-100µA (Max, Post-Rad)
Specifications
Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications HS-303ARH HS-303BRH contained 5962-95813. "hot-link" provided from website downloading
Pinouts
HS1-303ARH, HS-303BRH (SBDIP), CDIP2-T14 VIEW
HS9-303ARH, HS-303BRH (FLATPACK) CDFP3-F14 VIEW
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 1-888-468-3774 Intersil (and design) registered trademark Intersil Americas Inc. Copyright Intersil Americas Inc. 2006, 2008. Rights Reserved other trademarks mentioned property their respective owners.
HS-303ARH, HS-303BRH Ordering Information
ORDERING NUMBER 5962F9581304QCC 5962F9581304QXC 5962F9581304V9A 5962F9581304VCC 5962F9581304VXC HS0-303ARH/SAMPLE HS1-303ARH/PROTO HS9-303ARH/PROTO 5962F9581305QCC 5962F9581305QXC 5962F9581305V9A 5962F9581305VCC 5962F9581305VXC HS0-303BRH/SAMPLE HS1-303BRH/PROTO HS9-303BRH/PROTO PART NUMBER HS1-303ARH-8 HS9-303ARH-8 HS0-303ARH-Q HS1-303ARH-Q HS9-303ARH-Q HS0-303ARH/SAMPLE HS1-303ARH/PROTO HS9-303ARH/PROTO HS1-303BRH-8 HS9-303BRH-8 HS0-303BRH-Q HS1-303BRH-Q HS9-303BRH-Q HS0-303BRH/SAMPLE HS1-303BRH/PROTO HS9-303BRH/PROTO TEMP. RANGE (°C) +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 +125 SBDIP Flatpack D14.3 K14.A SBDIP Flatpack SBDIP Flatpack SBDIP SBDIP Flatpack D14.3 K14.A D14.3 K14.A D14.3 D14.3 K14.A PKG. SBDIP Flatpack SBDIP SBDIP Flatpack PKG. DWG. D14.3 K14.A D14.3 D14.3 K14.A
FN6411.1 July 2008
HS-303ARH, HS-303BRH Functional Diagram
TRUTH TABLE
LOGIC
Characteristics
DIMENSIONS: 2690µm 5200µm (106 milsx205 mils) Thickness: 483µm 25.4µm mils mil) INTERFACE MATERIALS: Glassivation: Type: (Phosphorous Silicon Glass) Thickness: Metallization: Type: AlSiCu Thickness: Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 A/cm2 Transistor Count:
Metallization Mask Layout
HS-303ARH, HS-303BRH
Intersil U.S. products manufactured, assembled tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications viewed www.intersil.com/design/quality
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design, software and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, www.intersil.com
FN6411.1 July 2008

Data Sheet July 2008 FN6411.1 Radiation Hardened CMOS Dual SPDT A

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