BF909A; BF909AR Dual-gate MOS-FETs Preliminary specification File
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BF909A; BF909AR Dual-gate MOS-FETs
Preliminary specification File under Discrete Semiconductors, SC07 1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
FEATURES Specially designed supply voltage High forward transfer admittance Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier Superior cross-modulation performance during AGC.
handbook, halfpage
BF909A; BF909AR
APPLICATIONS
view
MAM124
applications with supply voltage such television tuners professional communications equipment. DESCRIPTION Enhancement type field-effect transistor plastic microminiature SOT143B SOT143R package. transistor consists amplifier MOS-FET with source substrate interconnected internal bias circuit ensure good cross-modulation performance during AGC. PINNING SYMBOL source drain gate gate DESCRIPTION
BF909A marking code: M33.
Fig.1 Simplified outline (SOT143B) symbol.
handbook, halfpage
view
MAM125
BF909AR marking code: M34.
Fig.2 Simplified outline (SOT143R) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A, SNW-FQ-302B. PARAMETER drain-source voltage CONDITIONS MIN. TYP. MAX. UNIT
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER drain-source voltage drain current gate current gate current total power dissipation BF909A BF909AR Tstg Note Device mounted printed-circuit board. storage temperature operating junction temperature Fig.3 Tamb note Tamb note CONDITIONS
BF909A; BF909AR
MIN.
MAX. +150
UNIT
Ptot (mW)
BF909AR
BF909A
Tamb (°C)
Fig.3 Power derating curves.
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL BF909A BF909AR thermal resistance from junction soldering point BF909A BF909AR Notes Device mounted printed-circuit board. temperature soldering point source lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note connects gate Fig.18. PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate cut-off current gate cut-off current CONDITIONS VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG1-S VG2-S note VG1-S VG2-S VG2-S VG1-S note PARAMETER thermal resistance from junction ambient CONDITIONS note
BF909A; BF909AR
VALUE
UNIT
MIN.
MAX.
UNIT
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate drain-source capacitance noise figure MHz; GSopt; BSopt CONDITIONS pulsed; MIN. TYP. MAX. UNIT
reverse transfer capacitance
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
BF909A; BF909AR
MLB936
MLB937
handbook, halfpage
handbook, halfpage
Vunw (dBµV)
(mA)
gain reduction (dB)
MHz. funw MHz; Tamb
Fig.4
Unwanted voltage cross-modulation function gain reduction; typical values; Fig.18.
Fig.5 Transfer characteristics; typical values.
MLB938
handbook, halfpage
handbook, halfpage
MLB939
(mA)
(µA)
VG2-S
Fig.7 Fig.6 Output characteristics; typical values.
Gate current function gate voltage; typical values.
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
BF909A; BF909AR
MLB940
MLB941
handbook, halfpage
handbook, halfpage
(mS)
(mA)
(mA) (µA)
VG2-S
Fig.8
Forward transfer admittance function drain current; typical values.
Fig.9
Drain current function gate current; typical values.
handbook, halfpage
MLB942
MLB943
handbook, halfpage
(mA)
(mA)
VG2-S (connected VGG);
VG2-S connected VGG;
Fig.10 Drain current function gate supply voltage VGG); typical values; Fig.18.
Fig.11 Drain current function gate VGG) drain supply voltage; typical values; Fig.18.
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
BF909A; BF909AR
MLB944
handbook, halfpage
handbook, halfpage
MLB945
(mA)
(µA)
(connected VGG).
(connected VGG).
Fig.12 Drain current function gate voltage; typical values; Fig.18.
Fig.13 Gate current function gate voltage; typical values; Fig.18.
handbook, halfpage (mS)
MLB946
1000 |yrs| (µs)
1000
(deg)
|yrs|
(MHz)
(MHz)
1000
Tamb
Tamb
Fig.14 Input admittance function frequency; typical values.
Fig.15 Reverse transfer admittance phase function frequency; typical values.
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
BF909A; BF909AR
MLB948
(mS)
(deg)
(ms)
(MHz)
0.01 (MHz) 1000
Tamb
Tamb
Fig.16 Forward transfer admittance phase function frequency; typical values.
Fig.17 Output admittance function frequency; typical values.
VAGC
MLD151
Fig.18 Cross-modulation test set-up.
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
Table (MHz) 1000 Table Scattering parameters: Tamb VG2-S MAGNITUDE (ratio) 0.988 0.982 0.964 0.939 0.911 0.883 0.853 0.828 0.805 0.777 0.749 ANGLE (deg) -5.9 -11.9 -23.4 -34.3 -44.7 -54.2 -62.9 -70.9 -78.3 -85.4 -91.8 MAGNITUDE (ratio) 4.258 4.219 4.090 3.899 3.708 3.467 3.246 3.036 2.843 2.634 2.450 ANGLE (deg) 172.8 165.4 151.7 138.4 125.9 114.2 103.3 92.7 82.5 72.6 63.2 MAGNITUDE (ratio) 0.001 0.002 0.004 0.005 0.005 0.005 0.005 0.004 0.004 0.005 0.006
BF909A; BF909AR
ANGLE (deg) 89.1 81.9 73.9 66.8 61.7 60.5 63.3 72.4 97.9 121.3 138.7 MAGNITUDE (ratio) 0.990 0.998 0.979 0.969 0.956 0.944 0.934 0.924 0.916 0.906 0.890 ANGLE (deg) -3.2 -6.4 -12.6 -18.6 -24.4 -29.9 -35.1 -40.1 -45.1 -50.0 -54.9
Noise data: Tamb VG2-S (MHz) Fmin (dB) 2.00 (ratio) 0.603 (deg) 67.71 0.581
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
PACKAGE OUTLINES Plastic surface mounted package; leads
BF909A; BF909AR
SOT143B
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT143B
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
PACKAGE OUTLINES Plastic surface mounted package; reverse pinning; leads
BF909A; BF909AR
SOT143R
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.55 0.25 0.45 0.25
OUTLINE VERSION SOT143R
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-03-10
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF909A; BF909AR
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
NOTES
BF909A; BF909AR
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
NOTES
BF909A; BF909AR
1998
Philips Semiconductors
Preliminary specification
Dual-gate MOS-FETs
NOTES
BF909A; BF909AR
1998
Philips Semiconductors worldwide company
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other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1998
Internet:
SCA57
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
115102/00/01/pp16
Date release: 1998
Document order number:
9397 03402
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