M3D100 BD135; BD137; BD139 power transistors Product specifi

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M3D100 BD135; BD137; BD139 power transistors Product specifi

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book, halfpage
M3D100
BD135; BD137; BD139 power transistors
Product specification Supersedes data September 1994 File under Discrete Semiconductors, SC04 1997
Philips Semiconductors
Product specification
power transistors
FEATURES High current (max. voltage (max. APPLICATIONS Driver stages hi-fi amplifiers television circuits. DESCRIPTION power transistor TO-126; SOT32 plastic package. complements: BD136, BD138 BD140.
handbook, halfpage
BD135; BD137; BD139
PINNING emitter collector, connected metal part mounting surface base DESCRIPTION
view
MAM254
Fig.1
Simplified outline (TO-126; SOT32) symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BD135 BD137 BD139 VCEO collector-emitter voltage BD135 BD137 BD139 Ptot peak collector current total power dissipation current gain transition frequency open base CONDITIONS open emitter MIN. TYP. MAX. UNIT
1997
Philips Semiconductors
Product specification
power transistors
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BD135 BD137 BD139 VCEO collector-emitter voltage BD135 BD137 BD139 VEBO Ptot Tstg Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open collector open base PARAMETER collector-base voltage CONDITIONS open emitter
BD135; BD137; BD139
MIN.
MAX. +150 +150
UNIT
THERMAL CHARACTERISTICS SYMBOL j-mb Note Refer TO-126; SOT32 standard mounting conditions. PARAMETER thermal resistance from junction ambient thermal resistance from junction mounting base CONDITIONS note VALUE UNIT
1997
Philips Semiconductors
Product specification
power transistors
CHARACTERISTICS unless otherwise specified. SYMBOL ICBO IEBO PARAMETER collector cut-off current emitter cut-off current current gain CONDITIONS Fig.2 current gain BD135-10; BD137-10; BD139-10 BD135-16; BD137-16; BD139-16 VCEsat collector-emitter saturation voltage base-emitter voltage transition frequency current gain ratio complementary pairs
BD135; BD137; BD139
MIN.
TYP.
MAX.
UNIT
Fig.2
handbook, full pagewidth
MBH729
10-1
(mA)
Fig.2 current gain; typical values.
1997
Philips Semiconductors
Product specification
power transistors
PACKAGE OUTLINE
BD135; BD137; BD139
Plastic single-ended leaded (through hole) package; mountable heatsink, mounting hole; leads SOT32
scale
DIMENSIONS original dimensions) UNIT 0.88 0.65 0.60 0.45 11.1 10.5 4.58 2.29 16.5 15.3 L1(1) 2.54 0.254
Note Terminal dimensions within this zone uncontrolled allow flow plastic terminal irregularities. OUTLINE VERSION SOT32 REFERENCES JEDEC TO-126 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04
1997
Philips Semiconductors
Product specification
power transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BD135; BD137; BD139
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1997
Philips Semiconductors
Product specification
power transistors
NOTES
BD135; BD137; BD139
1997
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 101, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 1949 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 615800, Fax. +358 61580/xxx France: Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS/ATHENS, Tel. 4894 339/239, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Shivsagar Estate, Block, Annie Besant Worli, MUMBAI 018, Tel. 4938 541, Fax. 4938 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Rocio 220, floor, Suite 04552-903 Paulo, PAULO Brazil, Tel. 2333, Fax. 1849 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 7730 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2870, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1997
Internet:
SCA53
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
117047/00/02/pp8
Date release: 1997
Document order number:
9397 01843

M3D100 BD135; BD137; BD139 power transistors Product specifi

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