P-Channel Silicon MOSFET 2SJ307 Features resistance. Ul

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P-Channel Silicon MOSFET 2SJ307 Features resistance. Ul

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Ordering number:EN4317A
P-Channel Silicon MOSFET
2SJ307
Features
resistance. Ultrahigh-speed switching. Low-voltage drive. Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SJ307]
10.0
16.0
18.1
14.0
0.75 2.55
2.55
Specifications
Absolute Maximum Ratings 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS
Tc=25°C PW10µs, duty cycle1%
2.55
2.55
Gate Drain Source SANYO TO-220ML
Conditions
Ratings -250 +150
Unit
Tstg
Electrical Characteristics 25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Souce Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) ID=-1mA, VGS=0 IG=±100µA, VDS=0 VDS=-250V, VGS=0 VGS=±25V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-3A ID=-3A, VGS=-10V -1.5 0.75 Conditions Ratings -250 -100 -2.5 Unit
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40599TS/53093TH (KOTO) AX-9094 No.4317-1/4
2SJ307
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss td(on) td(off) VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz specified Test Circuit specified Test Circuit specified Test Circuit specified Test Circuit IS=-6A, VGS=0 Conditions Ratings 1250 -1.0 -1.5 Unit
Switching Time Test Circuit
No.4317-2/4

P-Channel Silicon MOSFET 2SJ307 Features resistance. Ul

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