Power Transistor (80V, 0.5A) 2SD1782K Features VCE(sat). VCE

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Power Transistor (80V, 0.5A) 2SD1782K Features VCE(sat). VCE

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2SD1782K
Power Transistor (80V, 0.5A)
2SD1782K
Features VCE(sat). VCE(sat) =0.2V(Typ.) IB=0.5 50mA) High VCEO, VCEO=80V Complements 2SB1198K. External dimensions (Unit
2.9±0.2 1.9±0.2 0.95 0.95 1.1+0.2 -0.1 0.8±0.1
+0.1 -0.05
1.6+0.2 -0.1
2.8±0.2
0~0.1
Structure Epitaxial planar type silicon transistor
terminals have same dimensions
0.3~0.6
+0.1 0.15 -0.06
ROHM SMT3 EIAJ SC-59
Abbreviated symbol
Emitter Base Collector
Denotes
Absolute maximum ratings (Ta=25°C)
Parameter Symbol VCBO VCEO VEBO Tstg Limits +150 Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Rev.A
2SD1782K
Electrical characteristics (Ta=25°C)
Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) Min. Typ. Max. Unit IC=50µA IC=2mA IE=50µA VCB=50V VEB=4V IC/IB=500mA/50mA VCE=3V, IC=100mA VCE=10V, -50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage current transfer ratio Transition frequency Output capacitance
Packaging specifications
Package Code Type 2SD1782K Basic ordering unit (pieces) Taping T146 3000
values classified follows
Item
Electrical characteristic curves
COLLECTOR CURRENT (mA)
VCE=3V
COLLECTOR CURRENT
Ta=100°C 25°C -25°C
CURRENT GAIN
4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA
Ta=25°C
5.0mA
1000
VCE=3V
Ta=100°C 25°C -25°C
1.5mA 1.0mA
0.5mA
IB=0mA
5001000
BASE EMITTER VOLTAGE
COLLECTOR EMITTER VOLTAGE
COLLECTOR CURRENT (mA)
Fig.1
Grounded emitter propagation characteristics
Fig.2
Grounded emitter output characteristics
Fig.3
current gain collector current
Rev.A
2SD1782K
COLLECTOR SATURATION VOLTAGE VCE(sat) (mV)
COLLECTOR SATURATION VOLTAGE VCE(sat) (mV)
1000
Ta=25°C
1000
lC/lB=10
COLLECTOR SATURATION VOLTAGE VCE(sat) (mV)
1000
lC/lB=20
Ta=100°C 25°C -25°C
IC/IB=50
Ta=100°C 25°C -25°C
5001000
5001000
1000
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Fig.4
Collector-emitter saturation voltage collector current
Fig.5
Collector-emitter saturation voltage collector current
Fig.6
Collector-emitter saturation voltage collector current
COLLECTOR SATURATION VOLTAGE VCE(sat) (mV)
1000
TRANSITION FREQUENCY (MHz)
lC/lB=50
1000
Ta=25°C VCE=10V
COLLECTOR OUTPUT CAPACITANCE (pF) EMITTER INPUT CAPACITANCE (pF)
1000
Ta=25°C f=1MHz IE=0A IC=0A
Ta=100°C 25°C -25°C
5001000
-100-200 -500-1000 EMITTER CURRENT (mA)
COLLECTOR CURRENT (mA)
COLLECTOR BASE VOLTAGE EMITTER BASE VOLTAGE
Fig.7
Collector-emitter saturation voltage collector current
Fig.8
Gain bandwidth product emitter current
Fig.9
Collector output capacitance collector-base voltage Emitter input capacitance emitter-base voltage
Rev.A
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

Power Transistor (80V, 0.5A) 2SD1782K Features VCE(sat). VCE

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