Power Transistor (50V, 2SD1760 2SD1864 !Features VCE(sat). V

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Power Transistor (50V, 2SD1760 2SD1864 !Features VCE(sat). V

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2SD1760 2SD1864
Power Transistor (50V,
2SD1760 2SD1864
!Features VCE(sat). VCE(sat) 0.5V (Typ.) (IC/IB 0.2A) Complements 2SB1184 2SB1243. !External dimensions (Units
2SD1760
1.5±0.3
6.5±0.2 +0.2 -0.1 C0.5 +0.2 -0.1 0.5±0.1
2SD1864
6.8±0.2 2.5±0.2
+0.3 -0.1
9.5±0.5
!Structure Epitaxial planar type silicon transistor
0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2
0.5±0.1
2.54 2.54
14.5±0.5
0.75
0.65±0.1
0.65Max.
4.4±0.2
1.05
0.45±0.1
ROHM CPT3 EIAJ SC-63
Base Collector Emitter
ROHM
Emitter Collector Base
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD1760 2SD1864 Symbol VCBO VCEO VEBO Limits -55~+150 Unit (DC) (Pulse)
Tstg
(Tc=25°C)2
Junction temperature Storage temperature
Single pulse, PW=100ms Printed circuit board, 1.7mm thick, collector copper plating 100mm2 larger.
2SD1760 2SD1864
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage current transfer ratio Transition frequency Output capacitance
Measured using pulse current.
Symbol BVCBO BVCEO BVEBO ICBO IEBO (sat)
Min.
Typ.
Max.
Unit IC=50µA IC=1mA IE=50µA VCB=40V VEB=4V IC/IB=2A/0.2A
Conditions
VCE=3V, IC=0.5A VCE=5V, IE=-500mA, f=30MHz VCB=10V, IE=0A, f=1MHz
!Packaging specifications
Package Code Type 2SD1760 2SD1864 Basic ordering unit (pieces) 2500 Taping 2500
values classified follows:
Item 82~180 120~270 180~390
!Electrical characteristic curves
COLLECTOR CURRENT
25°C
45mA 50mA
COLLECTOR CURRENT
COLLECTOR CURRENT
0.05 0.02 0.01 BASE EMITTER VOLTAGE 100°C 25°C -25°C
40mA 35mA 30mA 25mA 20mA
20mA 15mA
50mA 45mA 40mA 35mA 30mA 25mA
25°C
15mA
10mA
10mA
COLLECTOR EMITTER VOLTAGE
COLLECTOR EMITTER VOLTAGE
Fig.1 Grounded emitter propagation characteristics
1000
CURRENT GAIN
Fig.2 Grounded emitter output characteristics
1000
CURRENT GAIN
Fig.3 Grounded-emitter output characteristics(
COLLECTOR SATURATION VOLTAGE VCE(sat)
25°C
25°C IC/IB 0.05 0.02 0.01 0.010.02 0.05
100°C
0.01 0.02 0.05
25°C -25°C
0.01 0.02 0.05
COLLECTOR CURRENT
COLLECTOR CURRENT
COLLECTOR CURRENT
Fig.4 current gain collector current(
Fig.5 current gain collector curren(
Fig.6 Collector-emitter saturation voltage collector current
2SD1760 2SD1864
COLLECTOR SATURATION VOLTAGE (sat) BASE SATURATION VOLTAGE (sat)
0.05 0.02 (sat) 100°C 25°C -25°C (sat) 25°C 100°C
TRANSITION FREQUENCY (MHz)
lC/lB
25°C
COLLECTOR OUTPUT CAPACITANCE (pF)
1000
1000
25°C 1MHz
-25°C
0.01 0.01 0.02 0.05
5001000
COLLECTOR CURRENT
EMITTER CURRENT (mA)
COLLECTOR BASE VOLTAGE
Fig.7 Collector-emitter saturation voltage collector current Base-emitter saturation voltage collector current
Fig.8 Gain bandwidth product emitter current
Fig.9 Collector output capacitance collector-base voltage
TRANSIENT THERMAL RESISTANCE (°C/W)
COLLECTOR CURRENT
COLLECTOR CURRENT
VCE=5v IC=0.2A
0.05 0.02 25°C Single pulse 0.01
0.05 Ta=25°C Single nonrepetitive 0.02 pulse
1sec 10sec 100sec
COLLECTOR EMITTER VOLTAGE
TIME (ms)
COLLECTOR EMITTER VOLTAGE
Fig.10 Safe operating area (2SD1760)
Fig.11 Transient thermal resistance (2SD1760)
Fig.12 Safe operating area (2SD1864)
TRANSIENT THERMAL RESISTANCE (°C/W)
10sec 100sec 1000sec
TIME (ms)
Fig.13 Transient thermal resistance (2SD1864)
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document silicon basic material. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.0

Power Transistor (50V, 2SD1760 2SD1864 !Features VCE(sat). V

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